Datasheet DF2B6M4ASL (Toshiba) - 5

DF2B6M4ASL 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Electrostatic discharge voltage (IEC61000-4-2) (Contact) VESD (Note 1) ±15 kV Electrostatic discharge voltage (IEC61000-4-2) (Air) ±15 Peak pulse power (tp = 8/20 µs) PPK 30 W Peak pulse current (tp = 8/20 µs) IPP (Note 2) 2 A Junction temperature Tj 150 Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: According to IEC61000-4-2. Note 2: According to IEC61000-4-5. 8. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) VRWM: Working peak reverse voltage VT: Trigger voltage VH: Holding voltage (Reverse breakdown voltage) It1: Test current (Reverse breakdown current) IR: Reverse current VC: Clamp voltage IPP: Peak pulse current RDYN: Dynamic resistance Fig. 8.1 Definitions of Electrical Characteristics Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage VRWM (Note 1)    5.5 V Total capacitance Ct VR = 0 V, f = 1 MHz  0.15 0.2 pF Dynamic resistance RDYN (Note 2)   0.7  Ω Trigger voltage VT  5.6   V Holding voltage VH It1 = 1 mA 5.6 6.2 8.0 V Reverse current IR VRWM = 5.5 V   0.1 µA Clamp voltage VC (Note 3) IPP = 1 A  8.8  V IPP = 2 A  10 15 (Note 2) ITLP = 8 A  15  V ITLP = 16 A  20  Note 1: Recommended operating condition. Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between IPP1 = 8 A and IPP2 = 16 A. Note 3: Based on IEC61000-4-5 8/20 µs pulse. ©2019 5 2019-08-05 Toshiba Electronic Devices & Storage Corporation Rev.1.0