Datasheet BTA24, BTB24, BTA25 BTA26, BTB26, T25 (STMicroelectronics) - 2

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Characteristics BTA24, BTB24, BTA25, BTA26, BTB26, T25 1 Characteristics Table 2. Absolute maximum ratings Symbol Parameter Value Unit
TOP3 Tc = 105° C D2PAK / T TO-220AB c = 100° C IT(RMS) RMS on-state current (full sine wave) 25 A RD91 Ins/ T TOP3 Ins. c = 100° C TO-220AB Ins. Tc = 75° C Non repetitive surge peak on-state F = 50 Hz t = 20 ms 250 ITSM A current (full cycle, Tj initial = 25° C) F = 60 Hz t = 16.7 ms 260 I²t I²t Value for fusing tp = 10 ms 340 A²s Critical rate of rise of on-state current dI/dt F = 120 Hz T I j = 125° C 50 A/µs G = 2 x IGT , tr ≤ 100 ns Non repetitive surge peak off-state V V DRM/VRRM DSM/VRSM t V voltage p = 10 ms Tj = 25° C + 100 IGM Peak gate current tp = 20 µs Tj = 125° C 4 A PG(AV) Average gate power dissipation Tj = 125° C 1 W Tstg Storage junction temperature range - 40 to + 150 ° C Tj Operating junction temperature range - 40 to + 125
Table 3. Electrical characteristics (Tj = 25° C, unless otherwise specified), Snubberless and logic level (3 quadrants) T25, BTA/BTB24...W, BTA25...W, BTA26...W T25 BTA/BTB Symbol Test Conditions Quadrant Unit T2535 CW BW
I (1) GT I - II - III MAX. 35 35 50 mA VD = 12 V RL = 33 Ω VGT I - II - III MAX. 1.3 V V V D = VDRM RL = 3.3 kΩ GD I - II - III MIN. 0.2 V Tj = 125° C I (2) H IT = 500 mA MAX. 50 50 75 mA I - III 70 70 80 IL IG = 1.2 IGT MAX. mA II 80 80 100 dV/dt (2) VD = 67 %VDRM gate open Tj = 125° C MIN. 500 500 1000 V/µs (dI/dt)c (2) Without snubber Tj = 125° C MIN. 13 13 22 A/ms 1. minimum IGT is guaranted at 5% of IGT max. 2. for both polarities of A2 referenced to A1. 2/12 Document Outline Table 1. Device summary 1 Characteristics Table 2. Absolute maximum ratings Table 3. Electrical characteristics (Tj = 25˚ C, unless otherwise specified), Snubberless and logic level (3 quadrants) T25, BTA/BTB24...W, BTA25...W, BTA26...W Table 4. Electrical characteristics (Tj = 25˚ C, unless otherwise specified), standard (4 quadrants), BTB24...B, BTA25...B, BTA26...B, BTB26...B Table 5. Static characteristics Table 6. Thermal resistance Figure 1. Maximum power dissipation versus RMS on-state current (full cycle) Figure 2. RMS on-state current versus case temperature (full cycle) Figure 3. D2PAK RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm) (full cycle) Figure 4. Relative variation of thermal impedance versus pulse duration Figure 5. On-state characteristics (maximum values) Figure 6. Surge peak on-state current versus number of cycles Figure 7. Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms and corresponding value of I2t Figure 8. Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values) Figure 9. Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) Figure 10. Relative variation of critical rate of decrease of main current versus Tj Figure 11. D2PAK thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 µm) 2 Ordering information scheme Figure 12. BTA and BTB series Figure 13. T25 series 3 Package information Table 7. D2PAK dimensions Figure 14. D2PAK footprint dimensions (in millimeters) Table 8. RD91 dimensions Table 9. TOP3 (insulated and non_insulated) dimensions Table 10. TO-220AB (insulated and non-insulated) dimensions 4 Ordering information Table 11. Ordering information 5 Revision history Table 12. Revision history