Datasheet RV1S2211A (Renesas) - 4

RV1S2211A 章題 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) Parameter Symbol Ratings Unit Diode Forward Current (DC) IF 30 mA Reverse Voltage VR 6 V Power Dissipation Derating*1 ⊿PD/°C 0.6 mW/°C Power Dissipation PD 60 mW Peak Forward Current*2 IFP 0.5 A Transistor Col ector to Emitter Voltage VCEO 40 V Emitter to Col ector Voltage VECO 5 V Col ector Current IC 40 mA Power Dissipation Derating*1 ⊿PC/°C 1.2 mW/°C Power Dissipation PC 120 mW Isolation Voltage*3 BV 5000 Vr.m.s. Operating Ambient Temperature TA -40 ~ +115 C Storage Temperature Tstg -40 ~ +125 C *1 Derating from TA = 25C *2 PW = 100 s, Duty Cycle = 1% *3 AC voltage for 1 minute at TA = 25C, RH = 60% between input and output. Pins 1-2 shorted together, 3-4 shorted together. ELECTRICAL CHARACTERISTICS (TA = 25°C ) Parameter Symbol Conditions MIN. TYP. MAX. Unit Diode Forward Voltage VF IF = 5 mA 1.15 1.4 V Reverse Current IR VR = 5 V 5 A Terminal Capacitance Ct V = 0 V, f = 1 MHz 15 pF Transistor Collector to Emitter Dark ICEO IF=0mA, VCE=40V 100 nA Current Coupled Current Transfer Ratio CTR IF = 1 mA, VCE = 5 V 100 200 400 % (IC/IF) *1 Collector Saturation VCE (sat) IF = 1 mA, IC = 0.2 mA 0.3 V Voltage Isolation Resistance RI-O VI-O = 1kVDC 1011 Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF Rise Time*2 tr VCC = 5 V, IC = 2 mA 4 s Fall Time*2 tf RL = 100 5 *1. CTR rank CTR rank CTR(%) Condition N 100 ~ 400 IF = 1 mA, VCE = 5 V K 200 ~ 400 IF = 1 mA, VCE = 5 V L 150 ~ 300 IF = 1 mA, VCE = 5 V M 100 ~ 200 IF = 1 mA, VCE = 5 V R08DS0184EJ0100 Rev.1.00 Page 4 of 14 Nov 11,2019