Datasheet 2ED2108 (4) S06F (J) (Infineon) - 2

2ED2181 (4) S06F (J)2ED2108(4)S06F(J) 650 V half bridge gate driver with integrated bootstrap diode Description Description The 2ED2108 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 V on VS pin (VCC = 15 V) on transient voltages. There are not any parasitic thyristor structures present in the device, hence no parasitic latch up may occur at all temperature and voltage conditions. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET, SiC MOSFET or IGBT in the high side configuration, which operate up to 650 V. Refer to lead assignments for correct pin configuration. This diagram shows electrical connections only. Please refer to our application notes and design tips for proper circuit board layout. *Bootstrap diode is monolithically integrated Figure 1 Typical application block diagram Summary of feature comparison of the 2ED210x family: Table 1 Cross Part No. Input conduction logic prevention Deadtime Ground pins tON / tOFF Package logic 2ED2106S06F COM DSO - 8 HIN, LIN No None 2ED21064S06J VSS / COM DSO - 14 200 ns / 2ED2108S06F Internal 540 ns COM 200 ns DSO - 8 HIN, LIN Yes 2ED21084S06J Programmable 540 ns - 5000 ns VSS / COM DSO - 14 2ED2109S06F Internal 540 ns COM DSO - 8 IN, SD Yes 2ED21094S06J Programmable 740 ns / 540 ns - 5000 ns VSS / COM DSO - 14 200 ns 2ED21091S06F IN, DT/SD Yes Programmable COM DSO – 8 540 ns - 2700 ns Datasheet 2 of 24 V 2.10 www.infineon.com/soi 2019-09-12 Document Outline Features Product summary Potential applications Product validation Ordering information Description 1 Table of contents 2 Block diagram 3 Pin configuration and functionality 3.1 Pin configuration 3.2 Pin functionality 4 Electrical parameters 4.1 Absolute maximum ratings 4.2 Recommended operating conditions 4.3 Static electrical characteristics 4.4 Dynamic electrical characteristics 5 Application information and additional details 5.1 IGBT / MOSFET gate drive 5.2 Switching and timing relationships 5.3 Deadtime 5.4 Matched propagation delays 5.5 Input logic compatibility 5.6 Undervoltage lockout 5.7 Bootstrap diode 5.8 Calculating the bootstrap capacitance CBS 5.9 Tolerant to negative tranisents on input pins 5.10 Negative voltage transient tolerance of VS pin 5.11 NTSOA – Negative Transient Safe Operating Area 5.12 Higher headroom for input to output signal transmission with logic operation upto -11 V 5.13 Maximum switching frequency 5.14 PCB layout tips 6 Qualification information0F 7 Related products 8 Package details 9 Part marking information 10 Additional documentation and resources 10.1 Infineon online forum resources 11 Revision history