Datasheet 2ED2181 (4) S06F (J) (Infineon) - 2

2ED2181 (4) S06F (J) 650V high-side and low-side driver with integrated bootstrap diode Description The 2ED2181(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excel ent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 VDC on VS pin (VCC = 15 V) on transient voltages. There are not any parasitic thyristor structures present in the device, hence no parasitic latch up may occur at all temperature and voltage conditions. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET, SiC MOSFET or IGBT in the high side configuration, which operate up to 650 V. Up to 650V Up to 650V
2ED2181S06F 2ED21814S06J HIN
1
HIN
14
HIN
1
HIN VB
8
LIN
2
LIN VB
13
LIN
2
LIN HO
7
VSS
3 12
VSS HO
3 6
COM VS
4 11
VS VCC
4
LO VCC
5 TO LOAD 5
COM
10 TO LOAD 6
LO
9
VCC
7
VCC
8 *Bootstrap diode is monolithically integrated This diagram shows electrical connections only. Please refer to our application notes and design tips for proper circuit board layout. Figure 1 Typical application block diagram Summary of feature comparison of the 2ED218x family: Table 1 Drive Cross current Part No. Package Input logic conduction Deadtime Groun t source / prevention d pins ON / tOFF sink logic + 2.5 A / 2ED2181S06F DSO – 8 - 2.5 A COM HIN, LIN No None + 2.5 A / VSS / 2ED21814S06J DSO – 14 - 2.5 A COM + 2.5 A / 2ED2182S06F DSO – 8 Internal 400 ns COM - 2.5 A HIN, LIN Yes 200 ns / + 2.5 A / 2ED21824S06J DSO – 14 Programmable VSS / 200 ns - 2.5 A 400 ns - 5000 ns COM + 2.5 A / 2ED2183S06F DSO – 8 - 2.5 A Internal 400 ns COM HIN, LIN Yes + 2.5 A / 2ED21834S06J DSO – 14 Programmable VSS / - 2.5 A 400 ns - 5000 ns COM + 2.5 A / 2ED2184S06F DSO – 8 - 2.5 A Internal 400 ns COM 600 ns / 200 ns IN, SD Yes + 2.5 A / 2ED21844S06J DSO – 14 Programmable VSS / - 2.5 A 400 ns - 5000 ns COM Datasheet 2 of 24 V 2.10 www.infineon.com/soi 2019-09-12 Document Outline Features Product summary Product validation Description 1 Table of contents 2 Block diagram 3 Pin configuration and functionality 3.1 Pin configuration 3.2 Pin functionality 4 Electrical parameters 4.1 Absolute maximum ratings 4.2 Recommended operating conditions 4.3 Static electrical characteristics 4.4 Dynamic electrical characteristics 5 Application information and additional details 5.1 IGBT / MOSFET gate drive 5.2 Switching and timing relationships 5.3 Matched propagation delays 5.4 Input logic compatibility 5.5 Undervoltage lockout 5.6 Bootstrap diode 5.7 Calculating the bootstrap capacitance CBS 5.8 Tolerant to negative tranisents on input pins 5.9 Negative voltage transient tolerance of VS pin 5.10 NTSOA – Negative Transient Safe Operating Area 5.11 Higher headroom for input to output signal transmission with logic operation upto -11 V 5.12 Maximum switching frequency 5.13 PCB layout tips 6 Qualification information0F 7 Related products 8 Package details 9 Part marking information 10 Additional documentation and resources 10.1 Infineon online forum resources 11 Revision history