Datasheet LT8210 (Analog Devices) - 6
| Manufacturer | Analog Devices |
| Description | 100V VIN and VOUT Synchronous 4-Switch Buck‑Boost DC/DC Controller with Pass-Thru |
| Pages / Page | 46 / 6 — ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply … |
| Revision | A |
| File Format / Size | PDF / 6.1 Mb |
| Document Language | English |
ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply over the full operating
Model Line for this Datasheet
Text Version of Document
LT8210
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VIN = 12V, VINP = 12V, VEN/UVLO = 3.3V, VEXTVCC = 0V PARAMETER CONDITIONS MIN TYP MAX UNITS
BG1, BG2 Gate Driver Pull-Down Resistance 1 Ω TG1, TG2 Rise Time CLOAD = 3300pF (10% to 90%) 25 ns TG1, TG2 Fall Time CLOAD = 3300pF (10% to 90%) 15 ns BG1, BG2 Rise Time CLOAD = 3300pF (10% to 90%) 20 ns BG1, BG2 Fall Time CLOAD = 3300pF (10% to 90%) 15 ns TG Off to BG On-Delay CLOAD = 3300pF 60 ns BG Off to TG On-Delay CLOAD = 3300pF 60 ns Minimum TG1 On-Time CLOAD = 3300pF 200 ns Minimum BG2 On-Time CLOAD = 3300pF 220 ns BST1, BST2 Bias Current Top Gate High, VBST – VSW = 10V 5 µA Top Gate High, VBST – VSW = 10V, Pass-Thru Mode 0.6 µA BST1, BST2 Charging Current Non-Switching, VBST – VSW = 8.25V 50 µA Non-Switching, VBST – VSW = 3V 610 µA
Oscillator
Switching Frequency Range RT Set/Synchronized l 80 400 kHz Switching Frequency RT = 110k l 91 100 108 kHz RT = 39.2k l 190 200 210 kHz RT = 16.9k l 380 400 420 kHz SYNC/SPRD Input Low Level l 0.8 V SYNC/SPRD Input High Level l 1.17 V Spread-Spectrum Max. Frequency (% of fSW) VSYNC/SPRD = 3.3V 112.5 % Spread-Spectrum Min. Frequency (% of fSW) VSYNC/SPRD = 3.3V 100 %
Logic Inputs/Outputs
MODE1,2 Input Low Level l 0.8 V MODE1,2 Input High Level l 1.17 V MODE1,2 Leakage Current VMODE1,2 = 6 V 0.01 1 μA PWGD Output Low Voltage IPWGD = 1mA l 0.07 0.2 V PWGD Trip Level VFB1 Falling l –13 –10 –8 % VFB2 Rising l 8 10 12 % PWGD Anti-Glitch Delay VPWGD Rising or Falling l 2 10 20 µs PWGD Leakage Current VPWGD = 40V 0.01 1 μA
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 4:
This IC includes overtemperature protection that is intended may cause permanent damage to the device. Exposure to any Absolute to protect the device during momentary overload conditions. Junction Maximum Rating condition for extended periods may affect device temperature will exceed the maximum operating junction temperature reliability and lifetime. when overtemperature protection is active. Continuous operation above the
Note 2:
The LT8210E is guaranteed to meet performance specifications specified maximum operating junction temperature range may impair the from 0°C to 125°C junction temperature. Specifications over the –40°C device reliability. to 125°C operating junction temperature range are assured by design,
Note 5:
Negative voltages on the SW1, SW2, SNSP1 and SNSN1 pins characterization and correlation with statistical process controls. are limited, in an application, by the body diodes of the external NMOS The LT8210I is guaranteed over the full –40°C to 125°C junction devices, MB and MC, or parallel Schottky diodes when present. These pins temperature range. are tolerant of these negative voltages in excess of one diode drop below
Note 3:
Do not apply a voltage or current source to these pins. They ground, guaranteed by design. must be connected to capacitive loads only, otherwise permanent damage
Note 6:
Do not force voltage on the VC1, VC2, or SS pin. may occur. Rev. A 6 For more information www.analog.com Document Outline Features Applications Typical Application Description Table of Contents Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Operation Applications Information Typical Applications Revision History Typical Application Related Parts
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VIN = 12V, VINP = 12V, VEN/UVLO = 3.3V, VEXTVCC = 0V PARAMETER CONDITIONS MIN TYP MAX UNITS
BG1, BG2 Gate Driver Pull-Down Resistance 1 Ω TG1, TG2 Rise Time CLOAD = 3300pF (10% to 90%) 25 ns TG1, TG2 Fall Time CLOAD = 3300pF (10% to 90%) 15 ns BG1, BG2 Rise Time CLOAD = 3300pF (10% to 90%) 20 ns BG1, BG2 Fall Time CLOAD = 3300pF (10% to 90%) 15 ns TG Off to BG On-Delay CLOAD = 3300pF 60 ns BG Off to TG On-Delay CLOAD = 3300pF 60 ns Minimum TG1 On-Time CLOAD = 3300pF 200 ns Minimum BG2 On-Time CLOAD = 3300pF 220 ns BST1, BST2 Bias Current Top Gate High, VBST – VSW = 10V 5 µA Top Gate High, VBST – VSW = 10V, Pass-Thru Mode 0.6 µA BST1, BST2 Charging Current Non-Switching, VBST – VSW = 8.25V 50 µA Non-Switching, VBST – VSW = 3V 610 µA
Oscillator
Switching Frequency Range RT Set/Synchronized l 80 400 kHz Switching Frequency RT = 110k l 91 100 108 kHz RT = 39.2k l 190 200 210 kHz RT = 16.9k l 380 400 420 kHz SYNC/SPRD Input Low Level l 0.8 V SYNC/SPRD Input High Level l 1.17 V Spread-Spectrum Max. Frequency (% of fSW) VSYNC/SPRD = 3.3V 112.5 % Spread-Spectrum Min. Frequency (% of fSW) VSYNC/SPRD = 3.3V 100 %
Logic Inputs/Outputs
MODE1,2 Input Low Level l 0.8 V MODE1,2 Input High Level l 1.17 V MODE1,2 Leakage Current VMODE1,2 = 6 V 0.01 1 μA PWGD Output Low Voltage IPWGD = 1mA l 0.07 0.2 V PWGD Trip Level VFB1 Falling l –13 –10 –8 % VFB2 Rising l 8 10 12 % PWGD Anti-Glitch Delay VPWGD Rising or Falling l 2 10 20 µs PWGD Leakage Current VPWGD = 40V 0.01 1 μA
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 4:
This IC includes overtemperature protection that is intended may cause permanent damage to the device. Exposure to any Absolute to protect the device during momentary overload conditions. Junction Maximum Rating condition for extended periods may affect device temperature will exceed the maximum operating junction temperature reliability and lifetime. when overtemperature protection is active. Continuous operation above the
Note 2:
The LT8210E is guaranteed to meet performance specifications specified maximum operating junction temperature range may impair the from 0°C to 125°C junction temperature. Specifications over the –40°C device reliability. to 125°C operating junction temperature range are assured by design,
Note 5:
Negative voltages on the SW1, SW2, SNSP1 and SNSN1 pins characterization and correlation with statistical process controls. are limited, in an application, by the body diodes of the external NMOS The LT8210I is guaranteed over the full –40°C to 125°C junction devices, MB and MC, or parallel Schottky diodes when present. These pins temperature range. are tolerant of these negative voltages in excess of one diode drop below
Note 3:
Do not apply a voltage or current source to these pins. They ground, guaranteed by design. must be connected to capacitive loads only, otherwise permanent damage
Note 6:
Do not force voltage on the VC1, VC2, or SS pin. may occur. Rev. A 6 For more information www.analog.com Document Outline Features Applications Typical Application Description Table of Contents Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Operation Applications Information Typical Applications Revision History Typical Application Related Parts
