Datasheet HAT2169H (Renesas) - 3

HAT2169H
Silicon N Channel Power MOS FET
Power Switching
REJ03G0119-0400
Rev.4.00
Sep 20, 2005 Features
•
•
•
•
• High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 2.8 mΩ typ. (at VGS = 10 V) Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
5
D
5 3
12 4
G 4 1, 2, 3 Source
4
Gate
5
Drain
S S S
1 2 3 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C Rev.4.00 Sep 20, 2005 page 1 of 7 Symbol
VDSS
VGSS
ID
Note1 ID(pulse)
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg Ratings
40
±20
50
200
50
30
72
30
4.17
150
–55 to +150 Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C