Datasheet DN3545 (Microchip) - 3
| Manufacturer | Microchip |
| Description | N-Channel Depletion-Mode Vertical DMOS FET |
| Pages / Page | 14 / 3 — DN3545. TEMPERATURE SPECIFICATIONS. Electrical Specifications:. … |
| File Format / Size | PDF / 1.8 Mb |
| Document Language | English |
DN3545. TEMPERATURE SPECIFICATIONS. Electrical Specifications:. Parameter. Sym. Min. Typ. Max. Unit. Conditions. TEMPERATURE RANGE
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DN3545 TEMPERATURE SPECIFICATIONS Electrical Specifications:
Unless otherwise specified, for all specifications TA = TJ = +25°C.
Parameter Sym. Min. Typ. Max. Unit Conditions TEMPERATURE RANGE
Operating Ambient Temperature TA –55 — 150 °C Storage Temperature TS –55 — 150 °C
PACKAGE THERMAL RESISTANCE
3-lead TO-92 θJA — 132 — °C/W 3-lead SOT-89 θJA — 133 — °C/W
THERMAL CHARACTERISTICS Power ID (Note 1 ) ID Dissipation I (Note 1) I Package Continuous Pulsed DR DRM at T (mA) (mA) (mA) (mA) C = 25°C (W)
3-lead TO-92 136 1600 0.74 136 1600 3-lead SOT-89 200 300 1.6 (
Note 2
) 200 300
Note 1:
ID continuous is limited by the maximum rated TJ.
2:
Mounted on an FR4 board, 25 mm x 25 mm x 1.57 mm 2018 Microchip Technology Inc. DS20005438A-page 3 Document Outline 1.0 Electrical Characteristics 2.0 Typical Performance Curves FIGURE 2-1: Output Characteristics. FIGURE 2-2: Transconductance vs. Drain Current. FIGURE 2-3: Maximum Rated Safe Operating Area. FIGURE 2-4: Saturation Characteristics. FIGURE 2-5: Power Dissipation vs. Ambient Temperature. FIGURE 2-6: Thermal Response Characteristics. FIGURE 2-7: BVDSS Variation with Temperature. FIGURE 2-8: Transfer Characteristics. FIGURE 2-9: Capacitance vs. Drain-to- Source Voltage. FIGURE 2-10: On-Resistance vs. Drain Current. FIGURE 2-11: VGS(th) and RDS(ON) Variation with Temperature. FIGURE 2-12: Gate Drive Dynamic Characteristics. 3.0 Pin Description TABLE 3-1: 3-lead TO-92 Pin Function Table TABLE 3-2: 3-lead SOT-89 Pin Function Table 4.0 Functional Description FIGURE 4-1: Switching Waveforms and Test Circuit. TABLE 4-1: Product Summary 5.0 Packaging Information 5.1 Package Marking Information AMERICAS Corporate Office Atlanta Austin, TX Boston Chicago Dallas Detroit Houston, TX Indianapolis Los Angeles Raleigh, NC New York, NY San Jose, CA Canada - Toronto ASIA/PACIFIC Australia - Sydney China - Beijing China - Chengdu China - Chongqing China - Dongguan China - Guangzhou China - Hangzhou China - Hong Kong SAR China - Nanjing China - Qingdao China - Shanghai China - Shenyang China - Shenzhen China - Suzhou China - Wuhan China - Xian China - Xiamen China - Zhuhai ASIA/PACIFIC India - Bangalore India - New Delhi India - Pune Japan - Osaka Japan - Tokyo Korea - Daegu Korea - Seoul Malaysia - Kuala Lumpur Malaysia - Penang Philippines - Manila Singapore Taiwan - Hsin Chu Taiwan - Kaohsiung Taiwan - Taipei Thailand - Bangkok Vietnam - Ho Chi Minh EUROPE Austria - Wels Denmark - Copenhagen Finland - Espoo France - Paris Germany - Garching Germany - Haan Germany - Heilbronn Germany - Karlsruhe Germany - Munich Germany - Rosenheim Israel - Ra’anana Italy - Milan Italy - Padova Netherlands - Drunen Norway - Trondheim Poland - Warsaw Romania - Bucharest Spain - Madrid Sweden - Gothenberg Sweden - Stockholm UK - Wokingham
DN3545 TEMPERATURE SPECIFICATIONS Electrical Specifications:
Unless otherwise specified, for all specifications TA = TJ = +25°C.
Parameter Sym. Min. Typ. Max. Unit Conditions TEMPERATURE RANGE
Operating Ambient Temperature TA –55 — 150 °C Storage Temperature TS –55 — 150 °C
PACKAGE THERMAL RESISTANCE
3-lead TO-92 θJA — 132 — °C/W 3-lead SOT-89 θJA — 133 — °C/W
THERMAL CHARACTERISTICS Power ID (Note 1 ) ID Dissipation I (Note 1) I Package Continuous Pulsed DR DRM at T (mA) (mA) (mA) (mA) C = 25°C (W)
3-lead TO-92 136 1600 0.74 136 1600 3-lead SOT-89 200 300 1.6 (
Note 2
) 200 300
Note 1:
ID continuous is limited by the maximum rated TJ.
2:
Mounted on an FR4 board, 25 mm x 25 mm x 1.57 mm 2018 Microchip Technology Inc. DS20005438A-page 3 Document Outline 1.0 Electrical Characteristics 2.0 Typical Performance Curves FIGURE 2-1: Output Characteristics. FIGURE 2-2: Transconductance vs. Drain Current. FIGURE 2-3: Maximum Rated Safe Operating Area. FIGURE 2-4: Saturation Characteristics. FIGURE 2-5: Power Dissipation vs. Ambient Temperature. FIGURE 2-6: Thermal Response Characteristics. FIGURE 2-7: BVDSS Variation with Temperature. FIGURE 2-8: Transfer Characteristics. FIGURE 2-9: Capacitance vs. Drain-to- Source Voltage. FIGURE 2-10: On-Resistance vs. Drain Current. FIGURE 2-11: VGS(th) and RDS(ON) Variation with Temperature. FIGURE 2-12: Gate Drive Dynamic Characteristics. 3.0 Pin Description TABLE 3-1: 3-lead TO-92 Pin Function Table TABLE 3-2: 3-lead SOT-89 Pin Function Table 4.0 Functional Description FIGURE 4-1: Switching Waveforms and Test Circuit. TABLE 4-1: Product Summary 5.0 Packaging Information 5.1 Package Marking Information AMERICAS Corporate Office Atlanta Austin, TX Boston Chicago Dallas Detroit Houston, TX Indianapolis Los Angeles Raleigh, NC New York, NY San Jose, CA Canada - Toronto ASIA/PACIFIC Australia - Sydney China - Beijing China - Chengdu China - Chongqing China - Dongguan China - Guangzhou China - Hangzhou China - Hong Kong SAR China - Nanjing China - Qingdao China - Shanghai China - Shenyang China - Shenzhen China - Suzhou China - Wuhan China - Xian China - Xiamen China - Zhuhai ASIA/PACIFIC India - Bangalore India - New Delhi India - Pune Japan - Osaka Japan - Tokyo Korea - Daegu Korea - Seoul Malaysia - Kuala Lumpur Malaysia - Penang Philippines - Manila Singapore Taiwan - Hsin Chu Taiwan - Kaohsiung Taiwan - Taipei Thailand - Bangkok Vietnam - Ho Chi Minh EUROPE Austria - Wels Denmark - Copenhagen Finland - Espoo France - Paris Germany - Garching Germany - Haan Germany - Heilbronn Germany - Karlsruhe Germany - Munich Germany - Rosenheim Israel - Ra’anana Italy - Milan Italy - Padova Netherlands - Drunen Norway - Trondheim Poland - Warsaw Romania - Bucharest Spain - Madrid Sweden - Gothenberg Sweden - Stockholm UK - Wokingham
