Datasheet TPD7106F (Toshiba) - 8
| Manufacturer | Toshiba |
| Description | Intelligent Power Device Silicon Power MOS Integrated Circuit |
| Pages / Page | 22 / 8 — TPD7106F. 8. Absolute Maximum Ratings. Table 8.1 Absolute Maximum … |
| File Format / Size | PDF / 637 Kb |
| Document Language | English |
TPD7106F. 8. Absolute Maximum Ratings. Table 8.1 Absolute Maximum Ratings. Characteristics. Symbol. Rating. Unit. Note
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TPD7106F 8. Absolute Maximum Ratings Table 8.1 Absolute Maximum Ratings
(Ta = 25°C unless otherwise specified)
Characteristics Symbol Rating Unit Note
DC VDD (1) –18 to 27 V - Supply voltage Pulse VDD (2) 40 V t≤500ms Input voltage(1) VSTBY –0.3 to 40.0 V - Input voltage(2) VIN1,VIN2 –0.3 to 6.0 V - CPV voltage VCPV 40 V - TEST pin voltage VTEST 40 V - Output source current IOUT1 (1) –10 mA - Output sink current IOUT1 (2) +10 mA - Output sink current IOUT2 +400 mA - DIAG Output voltage VDIAG –0.3 to 40.0 V - DIAG Output current IDIAG 5 mA - Power dissipation PD 1.16 W - Operating temperature Topr –40 to 150 °C - Junction temperature Tj 150 °C - Strage temperature Tstg –55 to 150 °C - Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.)
8.1. Thermal Resistance Table 8.2 Thermal resistance
Charateristics Symbol Rating unit Thermal resistance(junction-to- ambient) Rth (j–a) 108 °C / W Note2: Glass epoxy board Material: FR-4(4 layer) Board size: 76.2mmx114.3mmx1.6mm © 2 019 8 2020-01-16 Toshiba Electronic Devices & Storage Corporation
(Ta = 25°C unless otherwise specified)
Characteristics Symbol Rating Unit Note
DC VDD (1) –18 to 27 V - Supply voltage Pulse VDD (2) 40 V t≤500ms Input voltage(1) VSTBY –0.3 to 40.0 V - Input voltage(2) VIN1,VIN2 –0.3 to 6.0 V - CPV voltage VCPV 40 V - TEST pin voltage VTEST 40 V - Output source current IOUT1 (1) –10 mA - Output sink current IOUT1 (2) +10 mA - Output sink current IOUT2 +400 mA - DIAG Output voltage VDIAG –0.3 to 40.0 V - DIAG Output current IDIAG 5 mA - Power dissipation PD 1.16 W - Operating temperature Topr –40 to 150 °C - Junction temperature Tj 150 °C - Strage temperature Tstg –55 to 150 °C - Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.)
8.1. Thermal Resistance Table 8.2 Thermal resistance
Charateristics Symbol Rating unit Thermal resistance(junction-to- ambient) Rth (j–a) 108 °C / W Note2: Glass epoxy board Material: FR-4(4 layer) Board size: 76.2mmx114.3mmx1.6mm © 2 019 8 2020-01-16 Toshiba Electronic Devices & Storage Corporation
