Datasheet IRF9Z24N (International Rectifier) - 3
| Manufacturer | International Rectifier |
| Description | HEXFET Power MOSFET |
| Pages / Page | 9 / 3 — VGS. TOP - 15V. - 10V. - 8.0V. - 7.0V. - 6.0V. - 5.5V. - 5.0V. BOTT OM - … |
| File Format / Size | PDF / 117 Kb |
| Document Language | English |
VGS. TOP - 15V. - 10V. - 8.0V. - 7.0V. - 6.0V. - 5.5V. - 5.0V. BOTT OM - 4. 5V. Fig 1. Fig 2. Fig 3. Fig 4
Model Line for this Datasheet
Text Version of Document
IRF9Z24N 1 0 0 100
VGS
2 0µ s PU LS E W ID TH
VGS TOP - 15V TOP - 15V - 10V
T cJ = 2 5°C
- 10V
)
- 8.0V
)
- 8.0V
A
- 7.0V - 7.0V
(
- 6.0V - 6.0V - 5.5V
t (A
- 5.5V - 5.0V - 5.0V BOTT OM - 4. 5V BOTT OM - 4. 5V
rrent rren u u C C e e c rc u 1 0 our 10 o -S -S to to n- n- rai rai , D D D D -I -I , -4.5 V 20 µ s PU LSE W ID TH -4.5 V T C J = 1 75°C 1 A 1 A 0 . 1 1 1 0 1 0 0 0.1 1 10 100 - D V S , Drain -to -So urce Vo ltag e (V) - D V S , Dra in -to-So urce V oltag e (V )
Fig 1.
Typical Output Characteristics,
Fig 2.
Typical Output Characteristics, 1 0 0 2 . 0 e I D = -12 A c ) n ta is t (A s n e 1 . 5 rre R n u O C e e T J = 2 5 °C rc ed) rc u u o liz 1 0 1 . 0 o T J = 1 7 5 °C -S a -S rm -to o -to in (N in ra ra D 0 . 5 D , D (on) -I , SD V DS = -2 5 V R 2 0 µ s P U L S E W ID T H V = G S -10 V 1 0 . 0 A A 4 5 6 7 8 9 1 0 - 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0 - T , Ju nctio n T emp eratu re (°C) G V S , Ga te -to -S o u rce V o ltag e (V ) J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature
VGS
2 0µ s PU LS E W ID TH
VGS TOP - 15V TOP - 15V - 10V
T cJ = 2 5°C
- 10V
)
- 8.0V
)
- 8.0V
A
- 7.0V - 7.0V
(
- 6.0V - 6.0V - 5.5V
t (A
- 5.5V - 5.0V - 5.0V BOTT OM - 4. 5V BOTT OM - 4. 5V
rrent rren u u C C e e c rc u 1 0 our 10 o -S -S to to n- n- rai rai , D D D D -I -I , -4.5 V 20 µ s PU LSE W ID TH -4.5 V T C J = 1 75°C 1 A 1 A 0 . 1 1 1 0 1 0 0 0.1 1 10 100 - D V S , Drain -to -So urce Vo ltag e (V) - D V S , Dra in -to-So urce V oltag e (V )
Fig 1.
Typical Output Characteristics,
Fig 2.
Typical Output Characteristics, 1 0 0 2 . 0 e I D = -12 A c ) n ta is t (A s n e 1 . 5 rre R n u O C e e T J = 2 5 °C rc ed) rc u u o liz 1 0 1 . 0 o T J = 1 7 5 °C -S a -S rm -to o -to in (N in ra ra D 0 . 5 D , D (on) -I , SD V DS = -2 5 V R 2 0 µ s P U L S E W ID T H V = G S -10 V 1 0 . 0 A A 4 5 6 7 8 9 1 0 - 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0 - T , Ju nctio n T emp eratu re (°C) G V S , Ga te -to -S o u rce V o ltag e (V ) J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature
