Datasheet NV6117 (Navitas Semiconductor)

NV6117 650 V GaNFast™ Power IC 2. Description
The NV6117 is a 650 V GaNFast™ power IC, optimized for high frequency, soft-switching topologies. Monolithic integration of FET, drive and logic creates an easy-to-use ‘digital-in, power-out’ high-performance powertrain building block, enabling designers to create the fastest, smallest, most efficient integrated
QFN 5 x 6 mm Simplified schematic
powertrain in the world. The highest dV/dt immunity, high-speed integrated drive and industry-standard low-profile, low-inductance,
1. Features
5 x 6 mm SMT QFN package allow designers to exploit Navitas GaN technology with simple, quick, dependable
GaNFast™ Power IC
solutions for breakthrough power density and efficiency. • Monolithically-integrated gate drive Navitas’ GaNFast™ power ICs extend the • Wide logic input range with hysteresis capabilities of traditional topologies such as flyback, • 5 V / 15 V input-compatible half-bridge, resonant, etc. to MHz+ and enable the • Wide VCC range (10 to 30 V) commercial introduction of breakthrough designs. • Programmable turn-on dV/dt • 200 V/ns dV/dt immunity
3. Topologies / Applications
• 650 V eMode GaN FET • AC-DC, DC-DC, DC-AC • Low 120 mΩ resistance • Buck, boost, half bridge, full bridge • Zero reverse recovery charge • Active Clamp Flyback, LLC resonant, Class D • 2 MHz operation • Quasi-Resonant Flyback • Mobile fast-chargers, adapters
Small, low-profile SMT QFN
• Notebook adaptors • 5 x 6 mm footprint, 0.85 mm profile • LED lighting, solar micro-inverters • Minimized package inductance • TV / monitor, wireless power • Server, telecom & networking SMPS
Environmental
• RoHS, Pb-free, REACH-compliant
4. Typical Application Circuits DCIN(+) DCOUT(+) DCIN(+) D VCC PWM
REG
D VDD 10V to 24V VCC DZ Half
dV/dt
PWM
REG
Bridge VDD Driver NV6117 S D IC Z
dV/dt
D VCC PWM
REG
V NV6117 DD S DZ
dV/dt
10V to 24V NV6117 S DC DC IN(-) DCOUT(-) IN(-) PGND Boost Half-bridge Final Datasheet 1 Rev Nov 22, 2019