Datasheet XPN7R104NC (Toshiba)

XPN7R104NC MOSFETs Silicon N-channel MOS (U-MOS) XPN7R104NC 1. Applications • Automotive • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance(WF) Start of commercial production 2018-09 ©2018-2020 1 2020-06-24 Toshiba Electronic Devices & Storage Corporation Rev.4.0