Datasheet AOZ5316NQI (Alpha & Omega) - 6

ManufacturerAlpha & Omega
DescriptionHigh-Current, High-Performance DrMOS Power Module
Pages / Page17 / 6 — AOZ5316NQI. Electrical Characteristics(4). Symbol. Parameter. Conditions. …
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AOZ5316NQI. Electrical Characteristics(4). Symbol. Parameter. Conditions. Min. Typ. Max. Units. GENERAL. INPUT SUPPLY AND UVLO. PWM INPUT

AOZ5316NQI Electrical Characteristics(4) Symbol Parameter Conditions Min Typ Max Units GENERAL INPUT SUPPLY AND UVLO PWM INPUT

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AOZ5316NQI Electrical Characteristics(4)
TA = 0°C to 150°C. Typical values reflect 25°C ambient temperature; VIN = 12V, VCC= PVCC= DISB# = 5V, unless otherwise specified. Min/Max values are guaranteed by test, design, or statistical correlation.
Symbol Parameter Conditions Min. Typ. Max. Units GENERAL
VIN Power Stage Power Supply 2.5 25 V VCC Low Voltage Bias Supply PVCC = VCC 4.5 5.5 V R (5) JC Reference to High-Side MOSFET 2.5 °C/W Thermal Resistance temperature rise R (5) JA Freq = 300kHz. AOS Demo Board 12.5 °C/W
INPUT SUPPLY AND UVLO
VCC_UVLO VCC Rising 3.5 3.9 V Under-Voltage Lockout VCC_HYST VCC Hysteresis 400 mV DISB# = 0V 1 A SMOD# = 5V, PWM = 0V 550 A IVCC Control Circuit Bias Current SMOD# = 0V, PWM = 0V 535 A SMOD# = 0V, PWM =1.65V 430 A PWM = 400kHz, 20% Duty Cycle 12 mA IPVCC Drive Circuit Operating Current PWM = 1MHz, 20% Duty Cycle 30 mA
PWM INPUT
VPWMH Logic High Input Voltage 2.7 V VPWML Logic Low Input Voltage 0.72 V IPWM_SRC PWM = 0V -150 A PWM Pin Input Current IPWM_SNK PWM = 3.3V 150 A VTRI PWM Input Tri-State Window 1.35 1.95 V VPMW_ PWM Tri-State Voltage Clamp PWM = Floating 1.65 V FLOAT
DISB# INPUT
VDISB#_ Enable Input Voltage 2.0 V ON VDISB#_ Disable Input Voltage 0.8 V OFF RDISB# DISB# Input Resistance Pull-Down Resistor 850 k
SMOD# INPUT
VSMOD#_H Logic High Input Voltage 2.0 V VSMOD#_L Logic Low Input Voltage 0.8 V RSMOD# SMOD# Input Resistance Pull-Down Resistor 850 k
GATE DRIVER TIMING
tPDLU PWM to High-Side Gate PWM: H→L, VSWH: H→L 24 ns tPDLL PWM to Low-Side Gate PWM: L  H, GL: H  L 25 ns tPDHU Low-side to High-Side Gate Deadtime GL: H  L, VSWH: L  H 15 ns tPDHL High-Side to Low-side Gate Deadtime VSWH: H  1V, GL: L  H 13 ns PWM: L  V t TRI, GL: H  L and TSSHD Tri-State Shutdown Delay 25 ns PWM: H  VTRI, VSWH: H  L PWM: V t TRI  H, VSWH: L  H TSEXIT Tri-State Propagation Delay 35 ns PWM: VTRI  L, GL: L  H tLGMIN Low-Side Minimum On-Time SMOD# = L 350 ns Rev. 1.0 November 2019
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