Datasheet FDC6312P (ON Semiconductor) - 5

FDS6312P Typical Characteristics 700
VDS = -5V ID = -2.3A f = 1MHz
VGS = 0 V 600 -10V
4
-15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 500 CISS 400
300
200 1 COSS 100 CRSS
0 0
0 1 2 3 4 5 0 6 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 20 5 10 P(pk), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 15 Figure 8. Capacitance Characteristics. 100 1ms RDS(ON) LIMIT 10ms
100ms
1s 1 10s
DC VGS = -4.5V
SINGLE PULSE
RθJA = 180oC/W 0.1 TA = 25oC
0.01
0.1 1 10 SINGLE PULSE
RθJA = 180°C/W
TA = 25°C 4 3 2 1 0
0.01 100 0.1 -VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum
Power Dissipation. 1
D = 0.5 RθJA(t) = r(t) + RθJA
RθJA = 180°C/W 0.2 0.1 0.1
0.05 P(pk) 0.02
0.01 t1
t2 0.01 TJ -TA = P * RθJA(t)
Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001
0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design. FDC6312P Rev C (W)