Datasheet AD8009 (Analog Devices) - 4

AD8009 ABSOLUTE MAXIMUM RATINGS1 MAXIMUM POWER DISSIPATION
Supply Voltage . 12.6 V The maximum power that can be safely dissipated by the AD8009 Internal Power Dissipation2 is limited by the associated rise in junction temperature. The maxi- Small Outline Package (R) . 0.75 W mum safe junction temperature for plastic encapsulated devices Input Voltage (Common-Mode) . ± VS is determined by the glass transition temperature of the plastic, Differential Input Voltage . ± 3.5 V approximately 150°C. Exceeding this limit temporarily may cause Output Short-Circuit Duration a shift in parametric performance due to a change in the stresses . Observe Power Derating Curves exerted on the die by the package. Exceeding a junction tempera- Storage Temperature Range R Package . –65°C to +125°C ture of 175°C for an extended period can result in device failure. Operating Temperature Range (A Grade) . –40°C to +85°C While the AD8009 is internally short circuit protected, this may Operating Temperature Range (J Grade) . 0°C to 70°C not be sufficient to guarantee that the maximum junction tempera- Lead Temperature Range (Soldering 10 sec) . 300°C ture (150°C) is not exceeded under all conditions. To ensure NOTES proper operation, it is necessary to observe the maximum power 1Stresses above those listed under Absolute Maximum Ratings may cause perma- derating curves. nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating
2.0
conditions for extended periods may affect device reliability.
TJ = 150 C
2Specification is for device in free air:
)
8-Lead SOIC Package: θJA = 155°C/W. 5-Lead SOT-23 Package: θ
1.5
JA = 240°C/W.
8-LEAD SOIC PACKAGE 1.0 0.5 5-LEAD SOT-23 PACKAGE MAXIMUM POWER DISSIPATION (W 0 –50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 AMBIENT TEMPERATURE (
ⴗ
C)
Figure 3. Plot of Maximum Power Dissipation vs. Temperature
ORDERING GUIDE Temperature Package Package Model Range Description Option Branding
AD8009AR –40°C to +85°C 8-Lead SOIC R-8 AD8009AR-REEL –40°C to +85°C 8-Lead SOIC R-8 AD8009AR-REEL7 –40°C to +85°C 8-Lead SOIC R-8 AD8009ARZ* –40°C to +85°C 8-Lead SOIC R-8 AD8009ARZ-REEL* –40°C to +85°C 8-Lead SOIC R-8 AD8009ARZ-REEL7* –40°C to +85°C 8-Lead SOIC R-8 AD8009JRT-R2 0°C to 70°C 5-Lead SOT-23 RT-5 HKJ AD8009JRT-REEL 0°C to 70°C 5-Lead SOT-23 RT-5 HKJ AD8009JRT-REEL7 0°C to 70°C 5-Lead SOT-23 RT-5 HKJ AD8009JRTZ-REEL* 0°C to 70°C 5-Lead SOT-23 RT-5 HKJ AD8009JRTZ-REEL7* 0°C to 70°C 5-Lead SOT-23 RT-5 HKJ AD8009ACHIPS Die *Z = Pb-free part.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8009 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. –4– REV. F Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAMS PRODUCT DESCRIPTION SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS MAXIMUM POWER DISSIPATION ORDERING GUIDE Typical Performance Characteristics APPLICATIONS RF Filter Driver RGB Monitor Driver Driving a Capacitive Load OUTLINE DIMENSIONS Revision History