Datasheet FMMT597 (Diodes) - 4
| Manufacturer | Diodes |
| Description | 300V PNP High Voltage Transistor in SOT23 |
| Pages / Page | 7 / 4 — A Product Line of. Diodes Incorporated. FMMT597. Electrical … |
| File Format / Size | PDF / 627 Kb |
| Document Language | English |
A Product Line of. Diodes Incorporated. FMMT597. Electrical Characteristics. Characteristic. Symbol. Min. Typ. Max. Unit. Test Condition
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A Product Line of Diodes Incorporated FMMT597 Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -300 — — V IC = -100µA Collector-Emitter Breakdown Voltage (Note 8) BVCEO -300 — — V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 -8.1 — V IE = -100µA Collector-Base Cut-Off Current ICBO — <1 -100 nA VCB = -250V Emitter-Base Cut-Off Current IEBO — <1 -100 nA VEB = -4V Collector-Emitter Cut-Off Current ICES — <1 -100 nA VCE = -250V 100 — — IC = -1mA, VCE = -10V Static Forward Current Transfer Ratio (Note 8) hFE 100 — 300 — IC = -50mA, VCE = -10V 100 — — IC = -100mA, VCE = -10V -250 IC = - 50mA, IB = -5mA Collector-Emitter Saturation Voltage (Note 8) VCE(SAT) — — mV -250 IC = - 100mA, IB = -20mA Base-Emitter Saturation Voltage (Note 8) VBE(SAT) — — -1000 mV IC = -100mA, IB = -20mA Base-Emitter Turn-On Voltage (Note 8) VBE(ON) — — -850 mV IC = -100mA, VCE = -10V V Transition Frequency f CE = -10V, IC = -50mA, T 75 — — MHz f = 100MHz Output Capacitance Cobo — — 10 pF VCB = -10V, f = 1MHz Note: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. FMMT597 4 of 7 November 2014 Document number: DS33108 Rev. 4 - 2
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(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -300 — — V IC = -100µA Collector-Emitter Breakdown Voltage (Note 8) BVCEO -300 — — V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 -8.1 — V IE = -100µA Collector-Base Cut-Off Current ICBO — <1 -100 nA VCB = -250V Emitter-Base Cut-Off Current IEBO — <1 -100 nA VEB = -4V Collector-Emitter Cut-Off Current ICES — <1 -100 nA VCE = -250V 100 — — IC = -1mA, VCE = -10V Static Forward Current Transfer Ratio (Note 8) hFE 100 — 300 — IC = -50mA, VCE = -10V 100 — — IC = -100mA, VCE = -10V -250 IC = - 50mA, IB = -5mA Collector-Emitter Saturation Voltage (Note 8) VCE(SAT) — — mV -250 IC = - 100mA, IB = -20mA Base-Emitter Saturation Voltage (Note 8) VBE(SAT) — — -1000 mV IC = -100mA, IB = -20mA Base-Emitter Turn-On Voltage (Note 8) VBE(ON) — — -850 mV IC = -100mA, VCE = -10V V Transition Frequency f CE = -10V, IC = -50mA, T 75 — — MHz f = 100MHz Output Capacitance Cobo — — 10 pF VCB = -10V, f = 1MHz Note: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. FMMT597 4 of 7 November 2014 Document number: DS33108 Rev. 4 - 2
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© Diodes Incorporated
