Datasheet PI4ULS3V4857 (Diodes) - 4
| Manufacturer | Diodes |
| Description | 6-BIT Bi-Directional Level Shifter for Sd 3.0-SDR104 Compliant Memory Card Application |
| Pages / Page | 11 / 4 — PI4ULS3V4857. Maximum Ratings. Note:. Limiting Values. Symbol Parameter. … |
| File Format / Size | PDF / 827 Kb |
| Document Language | English |
PI4ULS3V4857. Maximum Ratings. Note:. Limiting Values. Symbol Parameter. Conditions. Min. Max. Units. Recommended Operating Conditions
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PI4ULS3V4857 Maximum Ratings
(Above which useful life may be impaired. For user guidelines, not tested.) Storage Temperature . –55°C to +150°C
Note:
Junction Temperature . 125°C max Stresses greater than those listed under MAXIMUM Supply Voltage to Ground Potential . –0.5V to +4.6V RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of Host Side Input Voltage . –0.5V to +2.2V the device at these or any other conditions above those Card Side Input Voltage . –0.5V to +4.6V indicated in the operational sections of this specification Power Dissipation Continuous . .1000mW is not implied. Exposure to absolute maximum rating I/O Latch-up Current . -100mA to +100mA conditions for extended periods may affect reliability. ESD, HBM. –2000V to +2000V
Limiting Values Symbol Parameter Conditions Min. Max. Units
On pin V V SD -0.5 +4.6 V CC Supply voltage 4ms transient On pin VCCA -0.5 +2.2 V VI Input voltage 4ms transient at I/O pins, port A max. = 2.2V -0.5 +4.6 V Ptot Total power dissipation Tamb = -40 oC to +85 oC 1000 mW Tstg Storage temperature -55 150 oC Contact discharge -8 8 kV IEC 61000-4-2, Air discharge -15 15 kV level 4, all memory VESD Electrostatic discharge voltage card-side pins, Human Body Model (HBM) V JEDEC JESD22-A114F; all pins -2000 2000 V SD and CD to ground(1) Charge Device Model (CDM) JEDEC JESD22-C101E; all pins -500 500 V IIu(IO) Input/output latch-up current JESD 78B: -0.5 x VCC < VI < 1.5 x VCC; Tj < 125 oC -100 100 mA Note: 1. All system level tests are performed with the application-specific capacitors connected to the supply pins VSUPPLY, VLDO and VCCA.
Recommended Operating Conditions Operating Conditions Symbol Parameter Conditions Min. Typ. Max. Units
On pin V V SD 2.9(1) 3.6 V CC Supply voltage On pin VCCA 1.1 2.0 V Host side -0.3(2) V V CCA + 0.3 V I Input voltage Memory card side -0.3 VO(LDO) + 0.3 V Cext External capacitance Recommended capacitor at pin VCCB 2.2 µF ESR Equivalent series resistance At pin VLDO 0 50 mΩ Recommended capacitor at pin V C SD 0.1 µF ext External capacitance Recommended capacitor at pin VCCA 0.1 µF Note: 1. By minimum value the device is still fully functional, but the voltage on pin VLDO might drop below the recommended memory card supply voltage. 2. The voltage must not exceed 3.6 V. PI4ULS3V4857 www.diodes.com August 2020 Document Number DS42310 Rev 2-2 4 Diodes Incorporated
PI4ULS3V4857 Maximum Ratings
(Above which useful life may be impaired. For user guidelines, not tested.) Storage Temperature . –55°C to +150°C
Note:
Junction Temperature . 125°C max Stresses greater than those listed under MAXIMUM Supply Voltage to Ground Potential . –0.5V to +4.6V RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of Host Side Input Voltage . –0.5V to +2.2V the device at these or any other conditions above those Card Side Input Voltage . –0.5V to +4.6V indicated in the operational sections of this specification Power Dissipation Continuous . .1000mW is not implied. Exposure to absolute maximum rating I/O Latch-up Current . -100mA to +100mA conditions for extended periods may affect reliability. ESD, HBM. –2000V to +2000V
Limiting Values Symbol Parameter Conditions Min. Max. Units
On pin V V SD -0.5 +4.6 V CC Supply voltage 4ms transient On pin VCCA -0.5 +2.2 V VI Input voltage 4ms transient at I/O pins, port A max. = 2.2V -0.5 +4.6 V Ptot Total power dissipation Tamb = -40 oC to +85 oC 1000 mW Tstg Storage temperature -55 150 oC Contact discharge -8 8 kV IEC 61000-4-2, Air discharge -15 15 kV level 4, all memory VESD Electrostatic discharge voltage card-side pins, Human Body Model (HBM) V JEDEC JESD22-A114F; all pins -2000 2000 V SD and CD to ground(1) Charge Device Model (CDM) JEDEC JESD22-C101E; all pins -500 500 V IIu(IO) Input/output latch-up current JESD 78B: -0.5 x VCC < VI < 1.5 x VCC; Tj < 125 oC -100 100 mA Note: 1. All system level tests are performed with the application-specific capacitors connected to the supply pins VSUPPLY, VLDO and VCCA.
Recommended Operating Conditions Operating Conditions Symbol Parameter Conditions Min. Typ. Max. Units
On pin V V SD 2.9(1) 3.6 V CC Supply voltage On pin VCCA 1.1 2.0 V Host side -0.3(2) V V CCA + 0.3 V I Input voltage Memory card side -0.3 VO(LDO) + 0.3 V Cext External capacitance Recommended capacitor at pin VCCB 2.2 µF ESR Equivalent series resistance At pin VLDO 0 50 mΩ Recommended capacitor at pin V C SD 0.1 µF ext External capacitance Recommended capacitor at pin VCCA 0.1 µF Note: 1. By minimum value the device is still fully functional, but the voltage on pin VLDO might drop below the recommended memory card supply voltage. 2. The voltage must not exceed 3.6 V. PI4ULS3V4857 www.diodes.com August 2020 Document Number DS42310 Rev 2-2 4 Diodes Incorporated
