Datasheet EPC2059 (Efficient Power Conversion) - 3
| Manufacturer | Efficient Power Conversion |
| Description | Enhancement Mode Power Transistor |
| Pages / Page | 6 / 3 — eGaN® FET DATASHEET. Figure 5a: Capacitance (Linear Scale). Figure 5b: … |
| File Format / Size | PDF / 1.3 Mb |
| Document Language | English |
eGaN® FET DATASHEET. Figure 5a: Capacitance (Linear Scale). Figure 5b: Capacitance (Log Scale). Capacitance (pF)
Model Line for this Datasheet
Text Version of Document
eGaN® FET DATASHEET
EPC2059
Figure 5a: Capacitance (Linear Scale) Figure 5b: Capacitance (Log Scale)
800 1000 700 600 100 COSS = CGD + CSD 500 COSS = CGD + CSD C CISS = CGD + CGS ISS = CGD + CGS 400 C CRSS = CGD RSS = CGD 10
Capacitance (pF)
300
Capacitance (pF)
200 1 100 0 0.1 0 42.5 85.0 127.5 170.0 0 42.5 85.0 127.5 170.0
VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Figure 6: Output Charge and C Figure 7: Gate Charge OSS Stored Energy
60 4.0 5 I = 10 A 48 3.2
)
4 D
µJ
V = 85 V DS 36 2.4 3
Output Charge (nC) Stored Energy (
24 1.6 2
– C OSS – Gate-to-Source Voltage (V) Q OSS – E OSS
12 0.8
V GS
1 0 0.0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 6
VDS – Drain-to-Source Voltage (V) Q – Gate Charge (nC) G Figure 8: Reverse Drain-Source Characteristics Figure 9: Normalized On-State Resistance vs. Temperature
100 2.0 ID = 10 A
DS(on)
1.8 80 25˚C VGS = 5 V 125˚C VGS = 0 V 1.6 60 1.4 40 1.2
– Source-to-Drain Current (A) I SD
20
Normalized On-State Resistance R
1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.8 0 25 50 75 100 125 150
VSD – Source-to-Drain Voltage (V) TJ – Junction Temperature (°C)
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 | | 3
EPC2059
Figure 5a: Capacitance (Linear Scale) Figure 5b: Capacitance (Log Scale)
800 1000 700 600 100 COSS = CGD + CSD 500 COSS = CGD + CSD C CISS = CGD + CGS ISS = CGD + CGS 400 C CRSS = CGD RSS = CGD 10
Capacitance (pF)
300
Capacitance (pF)
200 1 100 0 0.1 0 42.5 85.0 127.5 170.0 0 42.5 85.0 127.5 170.0
VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Figure 6: Output Charge and C Figure 7: Gate Charge OSS Stored Energy
60 4.0 5 I = 10 A 48 3.2
)
4 D
µJ
V = 85 V DS 36 2.4 3
Output Charge (nC) Stored Energy (
24 1.6 2
– C OSS – Gate-to-Source Voltage (V) Q OSS – E OSS
12 0.8
V GS
1 0 0.0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 6
VDS – Drain-to-Source Voltage (V) Q – Gate Charge (nC) G Figure 8: Reverse Drain-Source Characteristics Figure 9: Normalized On-State Resistance vs. Temperature
100 2.0 ID = 10 A
DS(on)
1.8 80 25˚C VGS = 5 V 125˚C VGS = 0 V 1.6 60 1.4 40 1.2
– Source-to-Drain Current (A) I SD
20
Normalized On-State Resistance R
1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.8 0 25 50 75 100 125 150
VSD – Source-to-Drain Voltage (V) TJ – Junction Temperature (°C)
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 | | 3
