Datasheet MMDT3906 (Diodes) - 4

MMDT3906 Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO -40  V IC = -10µA, IE = 0 Collector-Emitter Breakdown Voltage (Note 7) BVCEO -40  V IC = -1mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO -5  V IE = -10µA, IC = 0 Collector Cut-Off Current ICEX  -50 nA VCE = -30V, VEB(OFF) = -3.0V Base Cut-Off Current IBL  -50 nA VCE = -30V, VEB(OFF) = -3.0V
ON CHARACTERISTICS
(Note 7) 60  IC = -100µA, VCE = -1V 80  I C = -1.0mA, VCE = -1V DC Current Gain hFE 100 300  I C = -10mA, VCE = -1V 60  IC = -50mA, VCE = -1V 30  IC = -100mA, VCE = -1V -0.25 I Collector-Emitter Saturation Voltage V C = -10mA, IB = -1mA CE(SAT)  V -0.40 IC = -50mA, IB = -5mA -0.65 -0.85 I Base-Emitter Saturation Voltage V C = -10mA, IB = -1mA BE(SAT)  V -0.95 IC = -50mA, IB = -5mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance COBO  4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Input Capacitance CIBO  10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 2 12 kΩ Voltage Feedback Ratio hre 0.1 10 x 10-4 VCE = -10V, IC = -1.0mA, Small Signal Current Gain h f = 1.0kHz fe 100 400  Output Admittance hoe 3 60 µS V Current Gain-Bandwidth Product f CE = -20V, IC = -10mA, T 250  MHz f = 100MHz V Noise Figure N CE = -5.0V, IC = -100μA, F  4.0 dB RS = 1.0kΩ f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time tD  35 ns Rise Time tR  35 ns VCC = -3.0V, IC = -10mA, Storage Time tS  200 ns IB1 = IB2 = -1.0mA Fall Time tF  50 ns Note: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. MMDT3906 4 of 7 April 2016 Document number: DS30124 Rev. 13- 2
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