Datasheet AP63356Q, AP63357Q (Diodes) - 4
| Manufacturer | Diodes |
| Description | Automotive-Compliant, 32V, 3.5A Low IQ Synchronous Buck Converter |
| Pages / Page | 28 / 4 — AP63356Q/AP63357Q. Absolute Maximum Ratings. Symbol. Parameter. Rating. … |
| File Format / Size | PDF / 1.7 Mb |
| Document Language | English |
AP63356Q/AP63357Q. Absolute Maximum Ratings. Symbol. Parameter. Rating. Unit. ESD Susceptibility (Note 5). Thermal Resistance
Model Line for this Datasheet
Text Version of Document
AP63356Q/AP63357Q Absolute Maximum Ratings
(Note 4) (@ TA = +25°C, unless otherwise specified.)
Symbol Parameter Rating Unit
-0.3 to +35.0 (DC) VIN Supply Pin Voltage V -0.3 to +40.0 (400ms) VEN Enable/UVLO Pin Voltage -0.3 to +35.0 V VFB Feedback Pin Voltage -0.3 to +6.0 V VCOMP Compensation Pin Voltage -0.3 to +6.0 V VPG Power-Good Pin Voltage -0.3 to +6.0 V VBST Bootstrap Pin Voltage VSW - 0.3 to VSW + 6.0 V -0.3 to VIN + 0.3 (DC) VSW Switch Pin Voltage V -2.5 to VIN + 2.0 (20ns) TSTG Storage Temperature -65 to +150 °C TJ Junction Temperature +170 °C TL Lead Temperature +260 °C
ESD Susceptibility (Note 5)
HBM Human Body Model ±2000 V CDM Charged Device Model ±1000 V Notes: 4. Stresses greater than the Absolute Maximum Ratings specified above can cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability can be affected by exposure to absolute maximum rating conditions for extended periods of time. 5. Semiconductor devices are ESD sensitive and can be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices.
Thermal Resistance
(Note 6)
Symbol Parameter Rating Unit
V-DFN3020-13/SWP θJA Junction to Ambient 25 °C/W (Type A1) V-DFN3020-13/SWP θJC Junction to Case 5 °C/W (Type A1) Note: 6. Test condition for V-DFN3020-13/SWP (Type A1): Device mounted on FR-4 substrate, four-layer PC board, 2oz copper, with minimum recommended pad layout.
Recommended Operating Conditions
(Note 7) (@ TA = +25°C, unless otherwise specified.)
Symbol Parameter Min Max Unit
VIN Supply Voltage 3.8 32 V VOUT Output Voltage 0.8 VIN V TA Operating Ambient Temperature -40 +125 °C TJ Operating Junction Temperature -40 +150 °C Note: 7. The device function is not guaranteed outside of the recommended operating conditions. AP63356Q/AP63357Q 4 of 28 September 2020 Document number: DS41948 Rev. 1 - 2
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© Diodes Incorporated
(Note 4) (@ TA = +25°C, unless otherwise specified.)
Symbol Parameter Rating Unit
-0.3 to +35.0 (DC) VIN Supply Pin Voltage V -0.3 to +40.0 (400ms) VEN Enable/UVLO Pin Voltage -0.3 to +35.0 V VFB Feedback Pin Voltage -0.3 to +6.0 V VCOMP Compensation Pin Voltage -0.3 to +6.0 V VPG Power-Good Pin Voltage -0.3 to +6.0 V VBST Bootstrap Pin Voltage VSW - 0.3 to VSW + 6.0 V -0.3 to VIN + 0.3 (DC) VSW Switch Pin Voltage V -2.5 to VIN + 2.0 (20ns) TSTG Storage Temperature -65 to +150 °C TJ Junction Temperature +170 °C TL Lead Temperature +260 °C
ESD Susceptibility (Note 5)
HBM Human Body Model ±2000 V CDM Charged Device Model ±1000 V Notes: 4. Stresses greater than the Absolute Maximum Ratings specified above can cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability can be affected by exposure to absolute maximum rating conditions for extended periods of time. 5. Semiconductor devices are ESD sensitive and can be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices.
Thermal Resistance
(Note 6)
Symbol Parameter Rating Unit
V-DFN3020-13/SWP θJA Junction to Ambient 25 °C/W (Type A1) V-DFN3020-13/SWP θJC Junction to Case 5 °C/W (Type A1) Note: 6. Test condition for V-DFN3020-13/SWP (Type A1): Device mounted on FR-4 substrate, four-layer PC board, 2oz copper, with minimum recommended pad layout.
Recommended Operating Conditions
(Note 7) (@ TA = +25°C, unless otherwise specified.)
Symbol Parameter Min Max Unit
VIN Supply Voltage 3.8 32 V VOUT Output Voltage 0.8 VIN V TA Operating Ambient Temperature -40 +125 °C TJ Operating Junction Temperature -40 +150 °C Note: 7. The device function is not guaranteed outside of the recommended operating conditions. AP63356Q/AP63357Q 4 of 28 September 2020 Document number: DS41948 Rev. 1 - 2
www.diodes.com
© Diodes Incorporated
