Datasheet BLP2425M10S250P (Ampleon) - 3
| Manufacturer | Ampleon |
| Description | Power LDMOS transistor |
| Pages / Page | 11 / 3 — BLP2425M10S250P. Power LDMOS transistor. 6. Characteristics. Table 6. DC … |
| File Format / Size | PDF / 1.0 Mb |
| Document Language | English |
BLP2425M10S250P. Power LDMOS transistor. 6. Characteristics. Table 6. DC characteristics. Symbol Parameter. Conditions. Min. Typ. Max. Unit
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BLP2425M10S250P Power LDMOS transistor 6. Characteristics Table 6. DC characteristics
Tj = 25 C, per section; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID =1.52 mA 65.00 - - V VGS(th) gate-source threshold voltage VDS = 32 V; ID = 50 mA 1.33 1.82 2.33 V IDSS drain leakage current VGS = 0 V; VDS = 32 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; - 28.4 - A VDS = 10 V IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA gfs forward transconductance VDS = 10 V; ID = 7.6 A - 10.1 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; - 95 - m ID = 5.32 A
Table 7. RF characteristics
Test signal: pulsed at 2450 MHz; RF performance at VDS = 32 V; IDq = 100 mA; tp = 100 s; = 10 %; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gp power gain PL = 250 W 13 15 - dB RLin input return loss PL = 250 W - 15 - dB D drain efficiency PL = 250 W 61 64 - %
7. Test information 7.1 Ruggedness in class-AB operation
The BLP2425M10S250P is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases with a time rate of 55 ms/degree under the following conditions: VDS = 32 V; IDq = 100 mA; PL = 260 W (CW); f = 2450 MHz; Tcase = 25 C.
7.2 Impedance information Table 8. Typical impedance
Measured load-pull data; measured on a single section of the push-pull transistor; IDq = 50 mA; VDS = 32 V.
f Z [1] [1] S ZL (MHz) ( ) ( )
2400 12.1 1.9j 4.1 5.7j 2450 8.2 0.5j 3.7 5.5j 2500 5.4 1.0j 3.3 5.4j [1] ZS and ZL defined in Figure 1. BLP2425M10S250P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 26 March 2020 3 of 11
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Test circuit 7.4 Graphical data 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents
BLP2425M10S250P Power LDMOS transistor 6. Characteristics Table 6. DC characteristics
Tj = 25 C, per section; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID =1.52 mA 65.00 - - V VGS(th) gate-source threshold voltage VDS = 32 V; ID = 50 mA 1.33 1.82 2.33 V IDSS drain leakage current VGS = 0 V; VDS = 32 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; - 28.4 - A VDS = 10 V IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA gfs forward transconductance VDS = 10 V; ID = 7.6 A - 10.1 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; - 95 - m ID = 5.32 A
Table 7. RF characteristics
Test signal: pulsed at 2450 MHz; RF performance at VDS = 32 V; IDq = 100 mA; tp = 100 s; = 10 %; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gp power gain PL = 250 W 13 15 - dB RLin input return loss PL = 250 W - 15 - dB D drain efficiency PL = 250 W 61 64 - %
7. Test information 7.1 Ruggedness in class-AB operation
The BLP2425M10S250P is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases with a time rate of 55 ms/degree under the following conditions: VDS = 32 V; IDq = 100 mA; PL = 260 W (CW); f = 2450 MHz; Tcase = 25 C.
7.2 Impedance information Table 8. Typical impedance
Measured load-pull data; measured on a single section of the push-pull transistor; IDq = 50 mA; VDS = 32 V.
f Z [1] [1] S ZL (MHz) ( ) ( )
2400 12.1 1.9j 4.1 5.7j 2450 8.2 0.5j 3.7 5.5j 2500 5.4 1.0j 3.3 5.4j [1] ZS and ZL defined in Figure 1. BLP2425M10S250P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 26 March 2020 3 of 11
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Test circuit 7.4 Graphical data 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents
