Datasheet 6ED2230S12T (Infineon) - 7
| Manufacturer | Infineon |
| Description | 1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP |
| Pages / Page | 29 / 7 — 6ED2230S12T. 1200 V Three Phase Gate Driver with Integrated Bootstrap … |
| Revision | 01_03 |
| File Format / Size | PDF / 3.4 Mb |
| Document Language | English |
6ED2230S12T. 1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP. Recommended operating conditions
Model Line for this Datasheet
Text Version of Document
link to page 7 link to page 7
6ED2230S12T 1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP Recommended operating conditions 4 Recommended operating conditions Table 3 Recommended operating conditions
For proper operation, the device should be used within the recommended conditions. All voltage parameters are absolute voltages referenced to COM unless otherwise stated in the table. The offset rating is tested with supplies of (VCC - COM) = (VB - VS) = 15 V.
Parameter Symbol Values Unit Note or Test Condition Min. Max.
Low-side supply voltage VCC 1ϯ 20 V — Logic input voltage (LIN, HIN, ITRIP) VIN VSS VSS + 5 V — RFE logic input voltage VRFE VSS VCC V — High-side floating well supply voltage VB1,2,3 VS1,2,3 VS1,2,3 V — + 12 + 20 High-side floating well supply offset VS1,2,3 COM – 8 900 V
1)
voltage Transient High-side floating well supply VSt -100 1000 V
2)
offset voltage Floating gate drive output voltage VHO1,2,3 VS1,2,3 VB1,2,3 V — Low-side output voltage VLO1,2,3 0 VCC V — Logic ground VSS - 5 5 V — Ambient temperature TA -40 125 °C — 1 Logic operation for VS of –8 V to 1200 V. Logic state held for Vs of –8 V to –VBS 2 In case VCC > VB there is an additional power dissipation in the internal bootstrap diode between pins VCC and VBx. Insensitivity of bridge output to negative transient voltage up to –100 V is not subject to production test – verified by design / characterization. Datasheet 7 Document Outline Features Typical applications Description Product validation Device information Table of contents 1 Block diagram 2 Lead configuration 3 Absolute maximum ratings 4 Recommended operating conditions 5 Electrical characteristics 5.1 Static electrical characteristics 5.2 Dynamic electrical characteristics 6 Application information and additional details 6.1 IGBT/MOSFET gate drive 6.2 Switching and timing relationships 6.2.1 Deadtime 6.2.2 Matched propagation delays 6.3 Input logic compatibility 6.4 Undervoltage lockout protection 6.5 Shoot-Through protection 6.6 Enable input 6.7 Fault reporting and programmable fault clear timer 6.8 Over-Current protection 6.9 Truth table: Undervoltage lockout, ITRIP, and ENABLE 6.10 Advanced input filter 6.11 Short-Pulse / Noise rejection 6.12 Integrated bootstrap diodes 6.13 Tolerant to negative VS transients 6.14 PCB layout tips 6.15 Additional documentation 7 Package information 7.1 Package information DSO-24 (DSO-28 4 pin removed) 8 Qualification information 9 Related products Revision history Insert from: "6EDL05I12.pdf" 6EDL05I12.vsdx Page-4
6ED2230S12T 1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP Recommended operating conditions 4 Recommended operating conditions Table 3 Recommended operating conditions
For proper operation, the device should be used within the recommended conditions. All voltage parameters are absolute voltages referenced to COM unless otherwise stated in the table. The offset rating is tested with supplies of (VCC - COM) = (VB - VS) = 15 V.
Parameter Symbol Values Unit Note or Test Condition Min. Max.
Low-side supply voltage VCC 1ϯ 20 V — Logic input voltage (LIN, HIN, ITRIP) VIN VSS VSS + 5 V — RFE logic input voltage VRFE VSS VCC V — High-side floating well supply voltage VB1,2,3 VS1,2,3 VS1,2,3 V — + 12 + 20 High-side floating well supply offset VS1,2,3 COM – 8 900 V
1)
voltage Transient High-side floating well supply VSt -100 1000 V
2)
offset voltage Floating gate drive output voltage VHO1,2,3 VS1,2,3 VB1,2,3 V — Low-side output voltage VLO1,2,3 0 VCC V — Logic ground VSS - 5 5 V — Ambient temperature TA -40 125 °C — 1 Logic operation for VS of –8 V to 1200 V. Logic state held for Vs of –8 V to –VBS 2 In case VCC > VB there is an additional power dissipation in the internal bootstrap diode between pins VCC and VBx. Insensitivity of bridge output to negative transient voltage up to –100 V is not subject to production test – verified by design / characterization. Datasheet 7 Document Outline Features Typical applications Description Product validation Device information Table of contents 1 Block diagram 2 Lead configuration 3 Absolute maximum ratings 4 Recommended operating conditions 5 Electrical characteristics 5.1 Static electrical characteristics 5.2 Dynamic electrical characteristics 6 Application information and additional details 6.1 IGBT/MOSFET gate drive 6.2 Switching and timing relationships 6.2.1 Deadtime 6.2.2 Matched propagation delays 6.3 Input logic compatibility 6.4 Undervoltage lockout protection 6.5 Shoot-Through protection 6.6 Enable input 6.7 Fault reporting and programmable fault clear timer 6.8 Over-Current protection 6.9 Truth table: Undervoltage lockout, ITRIP, and ENABLE 6.10 Advanced input filter 6.11 Short-Pulse / Noise rejection 6.12 Integrated bootstrap diodes 6.13 Tolerant to negative VS transients 6.14 PCB layout tips 6.15 Additional documentation 7 Package information 7.1 Package information DSO-24 (DSO-28 4 pin removed) 8 Qualification information 9 Related products Revision history Insert from: "6EDL05I12.pdf" 6EDL05I12.vsdx Page-4
