Datasheet BC107/A/B/C, BC108/A/B/C, BC109/A/B/C (CDIL) - 2

NPN SILICON PLANAR TRANSISTORS BC107/A/B/C BC108/A/B/C BC109/A/B/C TO-18 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Emitter Saturation Voltage
VCE (sat) IC=10mA, IB=0.5mA 0.25 V IC=100mA, IB=5mA 0.60 V
Base Emitter Saturation Voltage
VBE (sat) IC=10mA, IB=0.5mA 0.83 V IC=100mA, IB=5mA 1.05 V
Base Emitter On Voltage
V BE (on) IC=2mA, VCE=5V 0.55 0.70 V IC=10mA, VCE=5V 0.77 V I
Collector Knee Voltage
V C=10mA, IB=the value for which CE (K) 0.60 V I C=11mA at VCE=1V
Transition frequency
fT IC=10mA, VCE=5V, f=100MHz 150 MHz
Output Capacitance
Cobo VCB=10V, IE=0, f=1MHz 4.5 pF
Noise Figure
NF IC=0.2mA, VCE=5V, Rg=2KΩ, f=30Hz to 15KHz
BC109
4.0 dB f=1KHz, ∆F=200Hz
, BC109
4.0 dB
BC107/108
10 dB
SMALL SIGNAL CHARACTERISTICS DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Small Signal Current Gain
hfe IC=2mA, VCE=5V, f=1KHz
BC107
125 500
BC108
125 900
BC109
240 900
A Group
125 260
B Group
240 500
C Group
450 900
Input Impedance
hie IC=2mA, VCE=5V, f=1KHz
A Group
1.6 4.5 KΩ
B Group
3.2 8.5 KΩ
C Group
6.0 15 KΩ
Output Admittance
hoe IC=2mA, VCE=5V, f=1KHz
A Group
30 µmhos
B Group
60 µmhos
C Group
110 µmhos BC107_109Rev_3 231202E Continental Device India Limited
Data Sheet
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