Datasheet IRG4PH40UDPbF (International Rectifier) - 4
| Manufacturer | International Rectifier |
| Description | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT |
| Pages / Page | 11 / 4 — Fig. 4. Fig. 5. Fig. 6 |
| File Format / Size | PDF / 689 Kb |
| Document Language | English |
Fig. 4. Fig. 5. Fig. 6
Model Line for this Datasheet
Text Version of Document
IRG4PH40UDPbF 50 4.0 V = 15V GE 80 us PULSE WIDTH I = A 42 C 40 3.0 30 I = A 21 C 20 I = A 10.5 C 2.0 10 CE Maximum DC Collector Current(A) V , Collector-to-Emitter Voltage(V) 0 1.0 25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160 T , Case Temperature ( C) C ° T , Junction Temperature ( C) J °
Fig. 4
- Maximum Collector Current vs. Case
Fig. 5
- Typical Collector-to-Emitter Voltage Temperature vs. Junction Temperature 1 D = 0.50 thJC 0.20 0.1 0.10 0.05 0.02 Thermal Response (Z ) 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t 2 Notes: 1. Duty factor D = t / t 1 2 2. Peak TJ= PDM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
Fig. 4
- Maximum Collector Current vs. Case
Fig. 5
- Typical Collector-to-Emitter Voltage Temperature vs. Junction Temperature 1 D = 0.50 thJC 0.20 0.1 0.10 0.05 0.02 Thermal Response (Z ) 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t 2 Notes: 1. Duty factor D = t / t 1 2 2. Peak TJ= PDM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
