Datasheet AUIRL7732S2TR, AUIRL7732S2TR1 (International Rectifier) - 2
| Manufacturer | International Rectifier |
| Description | Automotive Grade. DirectFET Power MOSFET |
| Pages / Page | 11 / 2 — Static Characteristics @ TJ = 25°C (unless otherwise stated). Parameter. … |
| File Format / Size | PDF / 221 Kb |
| Document Language | English |
Static Characteristics @ TJ = 25°C (unless otherwise stated). Parameter. Min. Typ. Max. Units. Conditions
Model Line for this Datasheet
Text Version of Document
AUIRL7732S2TR/TR1
Static Characteristics @ TJ = 25°C (unless otherwise stated) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250μA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 5.0 6.6 mΩ VGS = 10V, ID = 35A i ––– 7.5 10.5 VGS = 4.5V, ID = 29A i VGS(th) Gate Threshold Voltage 1.0 1.8 2.5 V V ΔV DS = VGS, ID = 50μA GS(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -7.1 ––– mV/°C gfs Forward Transconductance 64 ––– ––– S VDS = 10V, ID = 35A RG Gate Resistance ––– 0.64 ––– Ω IDSS Drain-to-Source Leakage Current ––– ––– 5 μA VDS = 40V, VGS = 0V ––– ––– 250 VDS = 40V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated) Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge ––– 22 33 VDS = 20V Qgs1 Pre-Vth Gate-to-Source Charge ––– 3.3 ––– VGS = 4.5V Qgs2 Post-Vth Gate-to-Source Charge ––– 2.8 ––– nC ID = 35A Qgd Gate-to-Drain ("Miller") Charge ––– 13 ––– See Fig.11 Qgodr Gate Charge Overdrive ––– 2.9 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 15.8 ––– Qoss Output Charge ––– 13 ––– nC VDS = 16V, VGS = 0V td(on) Turn-On Delay Time ––– 21 ––– VDD = 20V, VGS = 4.5Vi tr Rise Time ––– 123 ––– ns ID = 35A td(off) Turn-Off Delay Time ––– 22 ––– RG = 6.8Ω tf Fall Time ––– 37 ––– Ciss Input Capacitance ––– 2020 ––– VGS = 0V Coss Output Capacitance ––– 410 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 210 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 1460 ––– VGS = 0V, VDS = 1.0V, f=1.0MHz Coss Output Capacitance ––– 365 ––– VGS = 0V, VDS = 32V, f=1.0MHz Coss eff. Effective Output Capacitance ––– 630 ––– VGS = 0V, VDS = 0V to 32V
Diode Characteristics @ TJ = 25°C (unless otherwise stated) Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D ––– ––– 58 (Body Diode) A showing the G ISM Pulsed Source Current integral reverse ––– ––– 230 S (Body Diode)g p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V IS = 35A, VGS = 0V i trr Reverse Recovery Time ––– 23 35 ns IF = 35A, VDD = 20V Qrr Reverse Recovery Charge ––– 16 24 nC di/dt = 100A/μs i Surface mounted on 1 in. square Cu Mounted to a PCB with small Mounted on minimum footprint full size (still air). clip heatsink (still air) board with metalized back and with small clip heatsink (still air) Notes through are on page 11 2 www.irf.com
Static Characteristics @ TJ = 25°C (unless otherwise stated) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250μA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 5.0 6.6 mΩ VGS = 10V, ID = 35A i ––– 7.5 10.5 VGS = 4.5V, ID = 29A i VGS(th) Gate Threshold Voltage 1.0 1.8 2.5 V V ΔV DS = VGS, ID = 50μA GS(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -7.1 ––– mV/°C gfs Forward Transconductance 64 ––– ––– S VDS = 10V, ID = 35A RG Gate Resistance ––– 0.64 ––– Ω IDSS Drain-to-Source Leakage Current ––– ––– 5 μA VDS = 40V, VGS = 0V ––– ––– 250 VDS = 40V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated) Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge ––– 22 33 VDS = 20V Qgs1 Pre-Vth Gate-to-Source Charge ––– 3.3 ––– VGS = 4.5V Qgs2 Post-Vth Gate-to-Source Charge ––– 2.8 ––– nC ID = 35A Qgd Gate-to-Drain ("Miller") Charge ––– 13 ––– See Fig.11 Qgodr Gate Charge Overdrive ––– 2.9 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 15.8 ––– Qoss Output Charge ––– 13 ––– nC VDS = 16V, VGS = 0V td(on) Turn-On Delay Time ––– 21 ––– VDD = 20V, VGS = 4.5Vi tr Rise Time ––– 123 ––– ns ID = 35A td(off) Turn-Off Delay Time ––– 22 ––– RG = 6.8Ω tf Fall Time ––– 37 ––– Ciss Input Capacitance ––– 2020 ––– VGS = 0V Coss Output Capacitance ––– 410 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 210 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 1460 ––– VGS = 0V, VDS = 1.0V, f=1.0MHz Coss Output Capacitance ––– 365 ––– VGS = 0V, VDS = 32V, f=1.0MHz Coss eff. Effective Output Capacitance ––– 630 ––– VGS = 0V, VDS = 0V to 32V
Diode Characteristics @ TJ = 25°C (unless otherwise stated) Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D ––– ––– 58 (Body Diode) A showing the G ISM Pulsed Source Current integral reverse ––– ––– 230 S (Body Diode)g p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V IS = 35A, VGS = 0V i trr Reverse Recovery Time ––– 23 35 ns IF = 35A, VDD = 20V Qrr Reverse Recovery Charge ––– 16 24 nC di/dt = 100A/μs i Surface mounted on 1 in. square Cu Mounted to a PCB with small Mounted on minimum footprint full size (still air). clip heatsink (still air) board with metalized back and with small clip heatsink (still air) Notes through are on page 11 2 www.irf.com
