Datasheet T835H-8G (STMicroelectronics) - 4

T835H-8G Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Maximum power dissipation versus on-state Figure 2. On-state RMS current versus case temperature RMS current (full cycle) (full cycle)
P(W) IT(RMS)(A) 10 9 8 α = 180° 8 7 α = 180° 6 6 5 4 4 3 2 2 180° α 1 α I T T(RMS)(A) c(°C) 0 0 0 2 4 6 8 0 25 50 75 100 125 150
Figure 3. On-state RMS current versus ambient Figure 4. On-state characteristics (maximum values) temperature (free air convection)
ITM(A) IT(RMS)(A) 100 4 Tj max. 3.5 Vto = 0.83 V R α = 180° d = 45 mΩ 3 2.5 Tj = 25 °C 10 2 Tj = 150 °C 1.5 1 0.5 Ta(°C) V 1 TM(V) 0 0 25 50 75 100 125 150 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Figure 6. Recommended maximum case-to-ambient Figure 5. Relative variation of thermal impedance versus thermal resistance versus ambient temperature for pulse duration different peak off-state voltages
K = [Zth/Rth] 1.0E+00 Rth(c-a) (°C/W) (for heatsink sizing to avoid thermal runaway) 70 VD = VR VD = VR =400 V Zth(j-c) 60 = 600 V VD = VR = 800 V 1.0E-01 50 Zth(j-a) 40 30 1.0E-02 20 10 tp(s) 1.0E-03 Ta (°C) 0 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 20 40 60 80 100 120 140
DS13570
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Rev 2 page 4/12
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 D²PAK package information 3 Ordering information Revision history