Datasheet BAT46WJ (Nexperia) - 7

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Nexperia BAT46WJ Single Schottky barrier diode 8. Test information
tr tp t D.U.T. 10 % + IF t R rr S = 50 Ω IF SAMPLING t OSCILLOSCOPE V = VR + IF × RS Ri = 50 Ω (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle  = 0.05 Oscilloscope: rise time tr = 0.35 ns
Fig 10. Reverse recovery time test circuit and waveforms
t1 P duty cycle δ = t t 2 2 t1 t 006aaa812
Fig 11. Duty cycle definition
The current ratings for the typical waveforms as shown in Figure 7, 8 and 9 are calculated according to the equations: I =   with I FAV IM M defined as peak current, I = I at DC, and I = I   with I RMS FAV RMS defined as RMS current. RMS M
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BAT46WJ All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet Rev. 2 — 8 November 2011 7 of 12
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents