Datasheet IRFP9240, SiHFP9240 (Vishay) - 2
| Manufacturer | Vishay |
| Description | Power MOSFET |
| Pages / Page | 11 / 2 — IRFP9240, SiHFP9240. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. … |
| File Format / Size | PDF / 1.9 Mb |
| Document Language | English |
IRFP9240, SiHFP9240. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. SPECIFICATIONS. PARAMETER SYMBOL. TEST
Model Line for this Datasheet
Text Version of Document
IRFP9240, SiHFP9240
Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - °C/W Maximum Junction-to-Case (Drain) RthJC - 0.83
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 μA - 200 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.20 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = - 200 V, VGS = 0 V - - - 100 Zero Gate Voltage Drain Current IDSS μA VDS = - 160 V, VGS = 0 V, TJ = 125 °C - - - 500 Drain-Source On-State Resistance RDS(on) VGS = - 10 V ID = - 7.2 Ab - - 0.50 Ω Forward Transconductance gfs VDS = - 50 V, ID = - 7.2 A 4.2 - - S
Dynamic
Input Capacitance Ciss - 1200 - VGS = 0 V, Output Capacitance Coss VDS = - 25 V, - 370 - pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 81 - Total Gate Charge Qg - - 44 I Gate-Source Charge Qgs V D = - 11 A, VDS = - 160 V GS = - 10 V - - 7.1 nC see fig. 6 and 13b Gate-Drain Charge Qgd - - 27 Turn-On Delay Time td(on) - 14 - V Rise Time t DD = - 100 V, ID = - 11 A r - 43 - RG = 9.1 Ω, RD= 8.6 Ω, ns Turn-Off Delay Time td(off) see fig. 10b - 39 - Fall Time tf - 38 - Between lead, D Internal Drain Inductance LD - 5.0 - 6 mm (0.25") from package and center of nH G die contact Internal Source Inductance LS - 13 - S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I MOSFET symbol D S - - - 12 showing the A integral reverse G Pulsed Diode Forward Currenta ISM p - n junction diode - - - 48 S Body Diode Voltage VSD TJ = 25 °C, IS = - 12 A, VGS = 0 Vb - - - 5.0 V Body Diode Reverse Recovery Time trr - 250 300 ns TJ = 25 °C, IF = - 11 A, dI/dt = 100 A/μsb Body Diode Reverse Recovery Charge Qrr - 2.9 3.6 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. www.vishay.com Document Number: 91239 2 S11-0444-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - °C/W Maximum Junction-to-Case (Drain) RthJC - 0.83
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 μA - 200 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.20 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = - 200 V, VGS = 0 V - - - 100 Zero Gate Voltage Drain Current IDSS μA VDS = - 160 V, VGS = 0 V, TJ = 125 °C - - - 500 Drain-Source On-State Resistance RDS(on) VGS = - 10 V ID = - 7.2 Ab - - 0.50 Ω Forward Transconductance gfs VDS = - 50 V, ID = - 7.2 A 4.2 - - S
Dynamic
Input Capacitance Ciss - 1200 - VGS = 0 V, Output Capacitance Coss VDS = - 25 V, - 370 - pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 81 - Total Gate Charge Qg - - 44 I Gate-Source Charge Qgs V D = - 11 A, VDS = - 160 V GS = - 10 V - - 7.1 nC see fig. 6 and 13b Gate-Drain Charge Qgd - - 27 Turn-On Delay Time td(on) - 14 - V Rise Time t DD = - 100 V, ID = - 11 A r - 43 - RG = 9.1 Ω, RD= 8.6 Ω, ns Turn-Off Delay Time td(off) see fig. 10b - 39 - Fall Time tf - 38 - Between lead, D Internal Drain Inductance LD - 5.0 - 6 mm (0.25") from package and center of nH G die contact Internal Source Inductance LS - 13 - S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I MOSFET symbol D S - - - 12 showing the A integral reverse G Pulsed Diode Forward Currenta ISM p - n junction diode - - - 48 S Body Diode Voltage VSD TJ = 25 °C, IS = - 12 A, VGS = 0 Vb - - - 5.0 V Body Diode Reverse Recovery Time trr - 250 300 ns TJ = 25 °C, IF = - 11 A, dI/dt = 100 A/μsb Body Diode Reverse Recovery Charge Qrr - 2.9 3.6 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. www.vishay.com Document Number: 91239 2 S11-0444-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
