IRFP9240, SiHFP9240 Vishay Siliconix L I V AS DS Vary tp to obtain required IAS VDS R D.U.T. G -+ VDD I V AS DD - 10 V tp t 0.01 p Ω VDS Fig. 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsFig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. Q 50 kΩ G - 10 V 12 V 0.2 µF 0.3 µF Q Q - GS GD + V D.U.T. DS VG VGS - 3 mA Charge I I G D Current sampling resistors Fig. 13a - Basic Gate Charge WaveformFig. 13b - Gate Charge Test Circuit www.vishay.com Document Number: 91239 6 S11-0444-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000