Datasheet BAT85S (Vishay)
| Manufacturer | Vishay |
| Description | Small Signal Schottky Diode |
| Pages / Page | 3 / 1 — BAT85S. Small Signal Schottky Diode. FEATURES. APPLICATIONS. DESIGN … |
| File Format / Size | PDF / 74 Kb |
| Document Language | English |
BAT85S. Small Signal Schottky Diode. FEATURES. APPLICATIONS. DESIGN SUPPORT TOOLS. MECHANICAL DATA Case:. Weight:
Model Line for this Datasheet
Text Version of Document
BAT85S
www.vishay.com Vishay Semiconductors
Small Signal Schottky Diode FEATURES
• Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Applications where a very low forward voltage is required
DESIGN SUPPORT TOOLS
click logo to get started
MECHANICAL DATA Case:
DO-35 (DO-204AH) Models Available
Weight:
approx. 125 mg
Cathode band color:
black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box
PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS
BAT85S BAT85S-TR or BAT85S-TAP Single BAT85S Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR 30 V Peak forward surge current tp ≤ 10 ms IFSM 5 A Repetitive peak forward current tp < 1 s IFRM 300 mA Forward continuous current IF 200 mA PCB mounting, I = 4 mm; Average forward current I V FAV 200 mA RWM = 25 V, Tamb = 50 °C
THERMAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air I = 4 mm, TL = constant RthJA 350 K/W Junction temperature Tj 125 °C Storage temperature range Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
IF = 0.1 mA VF 240 mV IF = 1 mA VF 320 mV Forward voltage IF = 10 mA VF 400 mV IF = 30 mA VF 500 mV IF = 100 mA VF 800 mV Reserve current VR = 25 V IR 2 μA Diode capacitance VR = 1 V, f = 1 MHz CD 10 pF Reserve recovery time IF = 10 mA to IR = 10 mA to iR = 1 mA trr 5 ns Rev. 1.9, 02-Jun-17
1
Document Number: 85513 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors
Small Signal Schottky Diode FEATURES
• Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Applications where a very low forward voltage is required
DESIGN SUPPORT TOOLS
click logo to get started
MECHANICAL DATA Case:
DO-35 (DO-204AH) Models Available
Weight:
approx. 125 mg
Cathode band color:
black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box
PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS
BAT85S BAT85S-TR or BAT85S-TAP Single BAT85S Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR 30 V Peak forward surge current tp ≤ 10 ms IFSM 5 A Repetitive peak forward current tp < 1 s IFRM 300 mA Forward continuous current IF 200 mA PCB mounting, I = 4 mm; Average forward current I V FAV 200 mA RWM = 25 V, Tamb = 50 °C
THERMAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air I = 4 mm, TL = constant RthJA 350 K/W Junction temperature Tj 125 °C Storage temperature range Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
IF = 0.1 mA VF 240 mV IF = 1 mA VF 320 mV Forward voltage IF = 10 mA VF 400 mV IF = 30 mA VF 500 mV IF = 100 mA VF 800 mV Reserve current VR = 25 V IR 2 μA Diode capacitance VR = 1 V, f = 1 MHz CD 10 pF Reserve recovery time IF = 10 mA to IR = 10 mA to iR = 1 mA trr 5 ns Rev. 1.9, 02-Jun-17
1
Document Number: 85513 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
