Datasheet BUK7V4R2-40H (Nexperia) - 7
| Manufacturer | Nexperia |
| Description | Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) |
| Pages / Page | 13 / 7 — Nexperia. BUK7V4R2-40H. Dual N-channel 40 V, 4.2 mOhm standard level … |
| Revision | 11022021 |
| File Format / Size | PDF / 313 Kb |
| Document Language | English |
Nexperia. BUK7V4R2-40H. Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)
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Nexperia BUK7V4R2-40H Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)
aaa-032386 160 aaa-018138 10-1 ID ID (A) A (A ( ) A 10-2 120 Min Ty T p y Ma M x a 10-3 80 10-4 40 17 1 5 7 °C ° 10-5 25 2 ° 5 C ° Tj = - 5 - 5° 5 C ° 0 10-6 0 1 2 3 4 5 6 7 0 1 2 3 4 5 VGS (V) VGS (V) VDS = 8 V Tj = 25 °C; VDS = 5 V
Fig. 8. Transfer characteristics; drain current as a Fig. 9. Sub-threshold drain current as a function of function of gate-source voltage; typical values, gate-source voltage, FET1 and FET2 FET1 and FET2
aaa-018139 5 aaa-032387 20 VGS( S t(h) h RD R S D o S n o (V) V (m ( Ω m ) 4. 4 5 5 V 5 5 V 4 16 Max a 3 Ty T p 12 2 8 Min 5. 5 5 . 5 V 1 4 VGS = 1 0 1 0 V 6 6 V 8 8 V 0 0 -60 -30 0 30 60 90 120 150 180 0 16 32 48 64 80 Tj (°C) ID (A) ID = 1 mA ; VDS = VGS Tj = 25 °C
Fig. 10. Gate-source threshold voltage as a function of Fig. 11. Drain-source on-state resistance as a function junction temperature, FET1 and FET2 of drain current; typical values, FET1 and FET2
BUK7V4R2-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 11 February 2021 7 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
aaa-032386 160 aaa-018138 10-1 ID ID (A) A (A ( ) A 10-2 120 Min Ty T p y Ma M x a 10-3 80 10-4 40 17 1 5 7 °C ° 10-5 25 2 ° 5 C ° Tj = - 5 - 5° 5 C ° 0 10-6 0 1 2 3 4 5 6 7 0 1 2 3 4 5 VGS (V) VGS (V) VDS = 8 V Tj = 25 °C; VDS = 5 V
Fig. 8. Transfer characteristics; drain current as a Fig. 9. Sub-threshold drain current as a function of function of gate-source voltage; typical values, gate-source voltage, FET1 and FET2 FET1 and FET2
aaa-018139 5 aaa-032387 20 VGS( S t(h) h RD R S D o S n o (V) V (m ( Ω m ) 4. 4 5 5 V 5 5 V 4 16 Max a 3 Ty T p 12 2 8 Min 5. 5 5 . 5 V 1 4 VGS = 1 0 1 0 V 6 6 V 8 8 V 0 0 -60 -30 0 30 60 90 120 150 180 0 16 32 48 64 80 Tj (°C) ID (A) ID = 1 mA ; VDS = VGS Tj = 25 °C
Fig. 10. Gate-source threshold voltage as a function of Fig. 11. Drain-source on-state resistance as a function junction temperature, FET1 and FET2 of drain current; typical values, FET1 and FET2
BUK7V4R2-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 11 February 2021 7 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
