Datasheet HMC633 (Analog Devices) - 8
| Manufacturer | Analog Devices |
| Description | GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 -17 GHz |
| Pages / Page | 8 / 8 — HMC633. GaAs PHEMT MMIC DRIVER. AMPLIFIER, 5 - 17 GHz. Mounting & … |
| File Format / Size | PDF / 654 Kb |
| Document Language | English |
HMC633. GaAs PHEMT MMIC DRIVER. AMPLIFIER, 5 - 17 GHz. Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
Model Line for this Datasheet
Text Version of Document
HMC633
v02.0517
GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 17 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectical y or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 0.102mm (0.004”) Thick GaAs MMIC 2 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina Ribbon Bond thin film substrates are recommended for bringing RF to and from the chip 0.076mm (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be (0.003”) IP used, the die should be raised 0.150mm (6 mils) so that the surface of H the die is coplanar with the surface of the substrate. One way to accom- plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the RF Ground Plane ground plane (Figure 2). K - C Microstrip substrates should brought as close to the die as possible in C order to minimize bond wire length. Typical die-to-substrate spacing is 0.127mm (0.005”) Thick Alumina 0.076mm to 0.152 mm (3 to 6 mils). Thin Film Substrate LO Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage. 0.102mm (0.004”) Thick GaAs MMIC IN B
Storage:
All bare die are placed in either Waffle or Gel based ESD protec- A tive containers, and then sealed in an ESD protective bag for shipment. Ribbon Bond 0.076mm Once the sealed ESD protective bag has been opened, all die should be (0.003”) stored in a dry nitrogen environment.
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt R & G to clean the chip using liquid cleaning systems. E RF Ground Plane
Static Sensitivity:
Fol ow ESD precautions to protect against ESD IV strikes. 0.150mm (0.005”) Thick R
Transients:
Suppress instrument and bias supply transients while bias is Moly Tab 0.254mm (0.010” Thick Alumina applied. Use shielded signal and bias cables to minimize inductive pick- Thin Film Substrate up. Figure 2. S - D
General Handling:
Handle the chip along the edges with a vacuum col et or with a sharp pair of bent tweezers. The R surface of the chip has fragile air bridges and should not be touched with vacuum col et, tweezers, or fingers. IE
Mounting
The chip is back-metal ized and can be die mounted with AuSn eutectic preforms or with electrical y conductive epoxy. LIF The mounting surface should be clean and flat. P Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool M temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO A NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fil et is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom- mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
2 - 8
Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Broadband Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature P1dB vs. Temperature Psat vs. Temperature Power Compression @ 10 GHz Power Compression @ 17 GHz Output IP3 vs. Temperature @ Pin = -15 dBm Noise Figure vs. Temperature Gain & Power vs. Supply Voltage @ 10 GHz Reverse Isolation vs. Temperature Gain, Power & Output IP3 vs. Gate Voltage @ 10 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Mounting & Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Mounting Wire Bonding
v02.0517
GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 17 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectical y or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 0.102mm (0.004”) Thick GaAs MMIC 2 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina Ribbon Bond thin film substrates are recommended for bringing RF to and from the chip 0.076mm (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be (0.003”) IP used, the die should be raised 0.150mm (6 mils) so that the surface of H the die is coplanar with the surface of the substrate. One way to accom- plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the RF Ground Plane ground plane (Figure 2). K - C Microstrip substrates should brought as close to the die as possible in C order to minimize bond wire length. Typical die-to-substrate spacing is 0.127mm (0.005”) Thick Alumina 0.076mm to 0.152 mm (3 to 6 mils). Thin Film Substrate LO Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage. 0.102mm (0.004”) Thick GaAs MMIC IN B
Storage:
All bare die are placed in either Waffle or Gel based ESD protec- A tive containers, and then sealed in an ESD protective bag for shipment. Ribbon Bond 0.076mm Once the sealed ESD protective bag has been opened, all die should be (0.003”) stored in a dry nitrogen environment.
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt R & G to clean the chip using liquid cleaning systems. E RF Ground Plane
Static Sensitivity:
Fol ow ESD precautions to protect against ESD IV strikes. 0.150mm (0.005”) Thick R
Transients:
Suppress instrument and bias supply transients while bias is Moly Tab 0.254mm (0.010” Thick Alumina applied. Use shielded signal and bias cables to minimize inductive pick- Thin Film Substrate up. Figure 2. S - D
General Handling:
Handle the chip along the edges with a vacuum col et or with a sharp pair of bent tweezers. The R surface of the chip has fragile air bridges and should not be touched with vacuum col et, tweezers, or fingers. IE
Mounting
The chip is back-metal ized and can be die mounted with AuSn eutectic preforms or with electrical y conductive epoxy. LIF The mounting surface should be clean and flat. P Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool M temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO A NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fil et is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom- mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
2 - 8
Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Broadband Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature P1dB vs. Temperature Psat vs. Temperature Power Compression @ 10 GHz Power Compression @ 17 GHz Output IP3 vs. Temperature @ Pin = -15 dBm Noise Figure vs. Temperature Gain & Power vs. Supply Voltage @ 10 GHz Reverse Isolation vs. Temperature Gain, Power & Output IP3 vs. Gate Voltage @ 10 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Mounting & Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Mounting Wire Bonding
