Datasheet HMC-ALH216 (Analog Devices) - 3

HMC-ALH216
v03.0209
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz
1
Absolute Maximum Ratings
Drain Bias Voltage +5.5 Vdc IP Gate Bias Voltage -1 to +0.3 Vdc ELECTROSTATIC SENSITIVE DEVICE H RF Input Power 6 dBm OBSERVE HANDLING PRECAUTIONS C Channel Temperature 180 °C - Continuous Pdiss (T=85°C) 1.4 W (derate 14.9 mW/C above 85°C) RS Thermal Resistance 67 °C/W (Channel to die bottom) IE Storage Temperature -65 to +150 °C IF Operating Temperature -55 to +85 °C L P M
Outline Drawing
A E IS O N W O L
Die Packaging Information
[1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. Standard Alternate 2. TYPICAL BOND PAD IS .004” SQUARE. GP-1 (Gel Pack) [2] 3. BACKSIDE METALLIZATION: GOLD. [1] Refer to the “Packaging Information” section for die 4. BACKSIDE METAL IS GROUND. packaging dimensions. 5. BOND PAD METALLIZATION: GOLD. [2] For alternate packaging information contact Hittite 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Microwave Corporation. 7. OVERALL DIE SIZE ±.002” Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
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