Datasheet HMC342 (Analog Devices) - 6
| Manufacturer | Analog Devices |
| Description | GaAs MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz |
| Pages / Page | 6 / 6 — HMC342. GaAs MMIC LOW NOISE. AMPLIFIER, 13 - 25 GHz. Mounting & … |
| File Format / Size | PDF / 310 Kb |
| Document Language | English |
HMC342. GaAs MMIC LOW NOISE. AMPLIFIER, 13 - 25 GHz. Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
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HMC342
v01.0907
GaAs MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding 0.102mm (0.004”) Thick GaAs MMIC IP Note). Wire Bond H 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina 0.076mm thin fi lm substrates are recommended for bringing RF to and from the chip (0.003”) (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the E - C die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick RF Ground Plane IS molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in 0.127mm (0.005”) Thick Alumina order to minimize bond wire length. Typical die-to-substrate spacing is Thin Film Substrate W NO 0.076mm to 0.152 mm (3 to 6 mils). Figure 1. O An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by conductive epoxy) placed no 0.102mm (0.004”) Thick GaAs MMIC further than 0.762mm (30 Mils) from the chip is recommended. S - L Wire Bond 0.076mm R
Handling Precautions
(0.003”) IE Follow these precautions to avoid permanent damage. IF
Storage:
All bare die are placed in either Waffle or Gel based ESD L protective containers, and then sealed in an ESD protective bag for RF Ground Plane P shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. M 0.150mm (0.005”) Thick Moly Tab A
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt 0.254mm (0.010”) Thick Alumina to clean the chip using liquid cleaning systems. Thin Film Substrate
Static Sensitivity:
Follow ESD precautions to protect against ESD Figure 2. strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and fl at.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom- mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). Info F rmoatr pr ion f iurcne, de ished b ly iv A e n r al y o a g D n evd to p ices is bla eli c eve o ed t rde o be ras: H ccuratite tiatne M d reli iacr ble ow . Ho av wev e C er, n o o rpo Fora r t p iro ic n e ,, 2 d 0 eli A ve lrpha R y, and toad, C o place hoel rd m er s s fo : Ard, MA 01 nalog Devic 8 e 2 s 4 , Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rde hone r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .ehit r o t nilte in .c e ao t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com
1 - 19
Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r app tion Su s p @ po h rt itt : P ite ho .c ne o : 1m -800-ANALOG-D
v01.0907
GaAs MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding 0.102mm (0.004”) Thick GaAs MMIC IP Note). Wire Bond H 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina 0.076mm thin fi lm substrates are recommended for bringing RF to and from the chip (0.003”) (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the E - C die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick RF Ground Plane IS molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in 0.127mm (0.005”) Thick Alumina order to minimize bond wire length. Typical die-to-substrate spacing is Thin Film Substrate W NO 0.076mm to 0.152 mm (3 to 6 mils). Figure 1. O An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by conductive epoxy) placed no 0.102mm (0.004”) Thick GaAs MMIC further than 0.762mm (30 Mils) from the chip is recommended. S - L Wire Bond 0.076mm R
Handling Precautions
(0.003”) IE Follow these precautions to avoid permanent damage. IF
Storage:
All bare die are placed in either Waffle or Gel based ESD L protective containers, and then sealed in an ESD protective bag for RF Ground Plane P shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. M 0.150mm (0.005”) Thick Moly Tab A
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt 0.254mm (0.010”) Thick Alumina to clean the chip using liquid cleaning systems. Thin Film Substrate
Static Sensitivity:
Follow ESD precautions to protect against ESD Figure 2. strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and fl at.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom- mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). Info F rmoatr pr ion f iurcne, de ished b ly iv A e n r al y o a g D n evd to p ices is bla eli c eve o ed t rde o be ras: H ccuratite tiatne M d reli iacr ble ow . Ho av wev e C er, n o o rpo Fora r t p iro ic n e ,, 2 d 0 eli A ve lrpha R y, and toad, C o place hoel rd m er s s fo : Ard, MA 01 nalog Devic 8 e 2 s 4 , Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rde hone r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .ehit r o t nilte in .c e ao t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com
1 - 19
Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r app tion Su s p @ po h rt itt : P ite ho .c ne o : 1m -800-ANALOG-D
