HMC797A v02.0418 GaAs PHEMT MMIC1 WATT POWER AMPLIFIER, DC - 22 GHzGain & Power vs. Idd @ 2 GHzGain & Power vs. Idd @ 10 GHz 35 35 ) IP m m 30 30 (dB H (dB at at s s ), P ), P m 25 m 25 (dB (dB R - C Gain Gain 1dB 20 1dB 20 P1dB P1dB E Psat Psat ), P ), P (dB (dB W n 15 n 15 ai ai G G O 10 10 300 320 340 360 380 400 300 320 340 360 380 400 Idd (mA) Idd (mA) R & P Output IP3 vs. Temperature A @ Pout = +18 dBm / Tone E Gain & Power vs. Idd @ 22 GHz 35 46 IN ) m 44 30 (dB at 42 s S - L ), P ) m 25 40 m R (dB (dB 38 3 IE Gain 1dB 20 P1dB IP 36 Psat ), P +25C (dB 34 LIF +85C n 15 -55C ai P G 32 M 10 30 300 320 340 360 380 400 0 4 8 12 16 20 24 A Idd (mA) FREQUENCY (GHz) Output IP3 vs. VddOutput IP3 vs. Idd@ Pout = 18 dBm / Tone@ Pout = 18 dBm / Tone 46 46 44 44 42 42 ) 40 ) 40 m m (dB 38 (dB 38 3 3 IP IP 36 8V 36 9V 10V 300 mA 34 11V 34 350 mA 400 mA 32 32 30 30 0 4 8 12 16 20 24 0 4 8 12 16 20 24 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 7 Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Gain & Return Loss Absolute Maximum Ratings Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Application Circuit Mounting & Bonding Techniques for Millimeterwave GaAs MMICs