Datasheet ADMV7810 (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | 81 GHz to 86 GHz, 1 W E-Band Power Amplifier with Power Detector |
| Pages / Page | 18 / 3 — Data Sheet. ADMV7810. SPECIFICATIONS. Table 1. Parameter Symbol. Min. … |
| Revision | A |
| File Format / Size | PDF / 435 Kb |
| Document Language | English |
Data Sheet. ADMV7810. SPECIFICATIONS. Table 1. Parameter Symbol. Min. Typ. Max. Unit
Model Line for this Datasheet
Text Version of Document
Data Sheet ADMV7810 SPECIFICATIONS
TA = 25°C, VDDxA and VDDxB = 4 V, IDD = 800 mA, unless otherwise noted.
Table 1. Parameter Symbol Min Typ Max Unit
OPERATING CONDITIONS Frequency Range 81 86 GHz PERFORMANCE Gain 18 20 dB Gain Variation over Temperature 0.02 dB/°C Output Power for 1 dB Compression OP1dB 26 28 dBm Saturated Output Power PSAT 29 dBm Output Third-Order Intercept at Maximum Gain1 OIP3 33 dBm Power Added Efficiency PAE 18 % Input Return Loss 12 dB Output Return Loss 20 dB POWER SUPPLY Total Drain Current2 IDD 800 mA 1 Data taken at output power (POUT) = 14 dBm per tone, 1 MHz spacing. 2 Adjust the VGGxA and VGGxB pads from −2 V to 0 V to achieve the total drain current (IDD) = 800 mA. Rev. A | Page 3 of 18 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE
TA = 25°C, VDDxA and VDDxB = 4 V, IDD = 800 mA, unless otherwise noted.
Table 1. Parameter Symbol Min Typ Max Unit
OPERATING CONDITIONS Frequency Range 81 86 GHz PERFORMANCE Gain 18 20 dB Gain Variation over Temperature 0.02 dB/°C Output Power for 1 dB Compression OP1dB 26 28 dBm Saturated Output Power PSAT 29 dBm Output Third-Order Intercept at Maximum Gain1 OIP3 33 dBm Power Added Efficiency PAE 18 % Input Return Loss 12 dB Output Return Loss 20 dB POWER SUPPLY Total Drain Current2 IDD 800 mA 1 Data taken at output power (POUT) = 14 dBm per tone, 1 MHz spacing. 2 Adjust the VGGxA and VGGxB pads from −2 V to 0 V to achieve the total drain current (IDD) = 800 mA. Rev. A | Page 3 of 18 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE
