Datasheet HMC8205BCHIPS (Analog Devices) - 4

ManufacturerAnalog Devices
Description0.4 GHz to 6 GHz, 35 W, GaN, Power Amplifier
Pages / Page19 / 4 — HMC8205BCHIPS. Data Sheet. Table 3. Parameter. Min. Typ. Max. Unit
RevisionA
File Format / SizePDF / 318 Kb
Document LanguageEnglish

HMC8205BCHIPS. Data Sheet. Table 3. Parameter. Min. Typ. Max. Unit

HMC8205BCHIPS Data Sheet Table 3 Parameter Min Typ Max Unit

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HMC8205BCHIPS Data Sheet
TA = 25°C, VDD = 50 V, IDQ = 1300 mA, and frequency range = 4 GHz to 6 GHz, unless otherwise noted.
Table 3. Parameter Min Typ Max Unit
FREQUENCY RANGE 4 6 GHz GAIN Small Signal Gain 24.5 26.5 dB Gain Flatness ±1.4 dB RETURN LOSS Input 8 dB Output 9 dB POWER Output (POUT) Input Power (PIN) = 24 dBm 43.5 45.5 dBm PIN = 28 dBm 46 dBm Gain PIN = 24 dBm 19 dB PIN = 28 dBm 18.5 dB POWER ADDED EFFICIENCY (PAE) PIN = 24 dBm 32 % PIN = 28 dBm 32 % TOTAL SUPPLY CURRENT (IDQ) 1300 mA SUPPLY VOLTAGE (VDD) 28 50 55 V Rev. A | Page 4 of 19 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTION INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCING MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE