Datasheet HMC906A (Analog Devices)
| Manufacturer | Analog Devices |
| Description | GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz |
| Pages / Page | 12 / 1 — HMC906A. GaAs pHEMT MMIC 2 WATT. POWER AMPLIFIER, 27.3 - 33.5 GHz. … |
| File Format / Size | PDF / 601 Kb |
| Document Language | English |
HMC906A. GaAs pHEMT MMIC 2 WATT. POWER AMPLIFIER, 27.3 - 33.5 GHz. Typical Applications. Features. Functional Diagram
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Text Version of Document
HMC906A
v02.0617
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Typical Applications Features
The HmC906A is ideal for: saturated output power: +33.5 dBm @ 20% pAe ip • satellite Communications High output ip3: +44 dBm @ +24 dBm / tone H • point-to-point radios High Gain: 26.5 dB • point-to-multi-point radios DC supply: +6V @ 1200 mA r - C • VsAT no external matching required e • military & space Die size: 3.18 x 2.73 x 0.1 mm w o
Functional Diagram General Description
p The HmC906A is a four stage GaAs pHemT mmiC 2 watt power Amplifier which operates between 27.3 and 33.5 GHz. The HmC906A provides 26.5 dB r & A of gain, and +33.5 dBm of saturated output power and e 20% pAe from a +6V supply. The oip3 of 40 dBm at 28 dBm / tone provides excel ent linearity for sat- lin el ite communications. The rf i/os are DC blocked and matched to 50 ohms for ease of integration into multi-Chip-modules (mCms). All data is taken with s - the chip in a 50 ohm test fixture connected via two r 0.025 mm (1 mil) diameter wire bonds of length ie 0.31 mm (12 mils). lif p m A
Electrical Specifications, T = +25° C, Vdd1 = Vdd2 = +6 V, Idd = 1200 mA [1] A
parameter min. Typ. max. min. Typ. max. Units frequency range 27.3 - 31.5 31.5 - 33.5 GHz Gain 25 26.5 25 26.5 dB input return loss 14 12 output return loss 17 16 dB output power for 1 dB Compression (p1dB) 32 33 31.5 33.5 dBm saturated output power (psat) 33.5 34 dBm output Third order intercept (ip3) 44 43 dBm pout / tone = +24 dBm Total supply Current (idd) 1200 1200 mA supply Voltage 5 6 6.5 5 6 6.5 V [1] Adjust Vgg (pad 2 or 12) between -2 to 0V to achieve idd = 1200 mA typical. Vgg typical = -0.7 V Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications P1dB vs. Supply Voltage P1dB vs. Temperature Input Return Loss vs. Temperature Gain vs. Temperature Absolute Maximum Ratings Outline Drawing Die Packaging Information Pad Descriptions Application Circuit Assembly Diagram
v02.0617
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Typical Applications Features
The HmC906A is ideal for: saturated output power: +33.5 dBm @ 20% pAe ip • satellite Communications High output ip3: +44 dBm @ +24 dBm / tone H • point-to-point radios High Gain: 26.5 dB • point-to-multi-point radios DC supply: +6V @ 1200 mA r - C • VsAT no external matching required e • military & space Die size: 3.18 x 2.73 x 0.1 mm w o
Functional Diagram General Description
p The HmC906A is a four stage GaAs pHemT mmiC 2 watt power Amplifier which operates between 27.3 and 33.5 GHz. The HmC906A provides 26.5 dB r & A of gain, and +33.5 dBm of saturated output power and e 20% pAe from a +6V supply. The oip3 of 40 dBm at 28 dBm / tone provides excel ent linearity for sat- lin el ite communications. The rf i/os are DC blocked and matched to 50 ohms for ease of integration into multi-Chip-modules (mCms). All data is taken with s - the chip in a 50 ohm test fixture connected via two r 0.025 mm (1 mil) diameter wire bonds of length ie 0.31 mm (12 mils). lif p m A
Electrical Specifications, T = +25° C, Vdd1 = Vdd2 = +6 V, Idd = 1200 mA [1] A
parameter min. Typ. max. min. Typ. max. Units frequency range 27.3 - 31.5 31.5 - 33.5 GHz Gain 25 26.5 25 26.5 dB input return loss 14 12 output return loss 17 16 dB output power for 1 dB Compression (p1dB) 32 33 31.5 33.5 dBm saturated output power (psat) 33.5 34 dBm output Third order intercept (ip3) 44 43 dBm pout / tone = +24 dBm Total supply Current (idd) 1200 1200 mA supply Voltage 5 6 6.5 5 6 6.5 V [1] Adjust Vgg (pad 2 or 12) between -2 to 0V to achieve idd = 1200 mA typical. Vgg typical = -0.7 V Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications P1dB vs. Supply Voltage P1dB vs. Temperature Input Return Loss vs. Temperature Gain vs. Temperature Absolute Maximum Ratings Outline Drawing Die Packaging Information Pad Descriptions Application Circuit Assembly Diagram
