Datasheet HMC8500PM5E (Analog Devices) - 4
| Manufacturer | Analog Devices |
| Description | 10 W (40 dBm), 0.01 GHz to 2.8 GHz, GaN Power Amplifier |
| Pages / Page | 17 / 4 — HMC8500PM5E. Data Sheet. TOTAL SUPPLY CURRENT BY VDD. Table 3. Parameter. … |
| Revision | A |
| File Format / Size | PDF / 308 Kb |
| Document Language | English |
HMC8500PM5E. Data Sheet. TOTAL SUPPLY CURRENT BY VDD. Table 3. Parameter. Symbol Min Typ Max Unit Test Conditions/Comments
Model Line for this Datasheet
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HMC8500PM5E Data Sheet TOTAL SUPPLY CURRENT BY VDD Table 3. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
QUIESCENT CURRENT I Adjust the gate bias control voltage (V ) between −8 V and 0 V to achieve DDQ GG I = 100 mA typical DDQ 100 mA V = 24 V DD 100 mA V = 28 V DD 100 mA V = 32 V DD Rev. A | Page 4 of 17 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Electrical Specifications Total Supply Current by VDD Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Evaluation Board Outline Dimensions Ordering Guide
QUIESCENT CURRENT I Adjust the gate bias control voltage (V ) between −8 V and 0 V to achieve DDQ GG I = 100 mA typical DDQ 100 mA V = 24 V DD 100 mA V = 28 V DD 100 mA V = 32 V DD Rev. A | Page 4 of 17 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Electrical Specifications Total Supply Current by VDD Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Evaluation Board Outline Dimensions Ordering Guide
