Datasheet HMC-APH473 (Analog Devices)
| Manufacturer | Analog Devices |
| Description | GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 37 - 40 GHz |
| Pages / Page | 6 / 1 — HMC-APH473. GaAs HEMT MMIC 1 WATT POWER. AMPLIFIER, 37 - 40 GHz. Typical … |
| File Format / Size | PDF / 294 Kb |
| Document Language | English |
HMC-APH473. GaAs HEMT MMIC 1 WATT POWER. AMPLIFIER, 37 - 40 GHz. Typical Applications. Features. Functional Diagram
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Text Version of Document
HMC-APH473
v03.0209
GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 37 - 40 GHz Typical Applications Features
This HMC-APH473 is ideal for: Output IP3: +37 dBm • Point-to-Point Radios P1dB: +28 dBm 3 • Point-to-Multi-Point Radios Gain: 15 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output IP Die Size: 3.59 x 1.26 x 0.1 mm H S - C
Functional Diagram General Description
R The HMC-APH473 is a two stage GaAs HEMT IE MMIC 0.6 Watt Power Amplifi er which operates IF between 37 and 40 GHz. The HMC-APH473 L provides 15 dB of gain, and an output power of P +28 dBm at 1 dB compression from a +5V supply M voltage. All bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated R A for reliable operation. The HMC-APH473 GaAs E HEMT MMIC 1 Watt Power Amplifi er is compatible W with conventional die attach methods, as well as O thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with R & P RF probes. A E IN
Electrical Specifi cations
[1]
, T = +25° C, Vdd1 = Vdd2 = 5V, Idd1 + Idd2 = 1080 mA
[2] L
A
Parameter Min. Typ. Max. Units Frequency Range 37 - 40 GHz Gain 11 15 dB Input Return Loss 10 dB Output Return Loss 14 dB Output power for 1dB Compression (P1dB) 28 dBm Output Third Order Intercept (IP3) 37 dBm Supply Current (Idd1+Idd2) 1080 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd = 1080 mA total Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 184
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v03.0209
GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 37 - 40 GHz Typical Applications Features
This HMC-APH473 is ideal for: Output IP3: +37 dBm • Point-to-Point Radios P1dB: +28 dBm 3 • Point-to-Multi-Point Radios Gain: 15 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output IP Die Size: 3.59 x 1.26 x 0.1 mm H S - C
Functional Diagram General Description
R The HMC-APH473 is a two stage GaAs HEMT IE MMIC 0.6 Watt Power Amplifi er which operates IF between 37 and 40 GHz. The HMC-APH473 L provides 15 dB of gain, and an output power of P +28 dBm at 1 dB compression from a +5V supply M voltage. All bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated R A for reliable operation. The HMC-APH473 GaAs E HEMT MMIC 1 Watt Power Amplifi er is compatible W with conventional die attach methods, as well as O thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with R & P RF probes. A E IN
Electrical Specifi cations
[1]
, T = +25° C, Vdd1 = Vdd2 = 5V, Idd1 + Idd2 = 1080 mA
[2] L
A
Parameter Min. Typ. Max. Units Frequency Range 37 - 40 GHz Gain 11 15 dB Input Return Loss 10 dB Output Return Loss 14 dB Output power for 1dB Compression (P1dB) 28 dBm Output Third Order Intercept (IP3) 37 dBm Supply Current (Idd1+Idd2) 1080 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd = 1080 mA total Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 184
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
