Datasheet HMC408LP3, 408LP3E (Analog Devices)
| Manufacturer | Analog Devices |
| Description | GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz |
| Pages / Page | 8 / 1 — HMC408LP3 / 408LP3E. GaAs InGaP HBT MMIC 1 WATT. POWER AMPLIFIER, 5.1 - … |
| File Format / Size | PDF / 388 Kb |
| Document Language | English |
HMC408LP3 / 408LP3E. GaAs InGaP HBT MMIC 1 WATT. POWER AMPLIFIER, 5.1 - 5.9 GHz. Typical Applications. Features
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Text Version of Document
HMC408LP3 / 408LP3E
v03.0705
GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Typical Applications Features
The HMC408LP3 / HMC408LP3E is ideal for: Gain: 20 dB • 802.11a & HiperLAN WLAN Saturated Power: +32.5 dBm @ 27% PAE • UNII & Point-to-Point / Multi-Point Radios Single Supply Voltage: +5V • Access Point Radios Power Down Capability 11 3x3 mm Leadless SMT Package
Functional Diagram General Description
T The HMC408LP3 & HMC408LP3E are 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifi er MMICs which offer - SM +30 dBm P1dB. The amplifi er provides 20 dB of gain, S +32.5 dBm of saturated power, and 27% PAE from a R +5V supply voltage. The input is internally matched IE to 50 Ohms while the output requires a minimum of external components. Vpd can be used for full power IF L down or RF output power/current control. The amplifi er P is packaged in a low cost, 3x3 mm leadless surface M mount package with an exposed base for improved RF and thermal performance. R A E W O
Electrical Specifi cations, T = +25° C, Vs = 5V, Vpd = 5V A
& P R Parameter Min. Typ. Max. Min. Typ. Max. Units A Frequency Range 5.7 - 5.9 5.1 - 5.9 GHz E Gain 17 20 17 20 dB Gain Variation Over Temperature 0.045 0.055 0.045 0.055 dB/°C IN L Input Return Loss 8 8 dB Output Return Loss* 14 6 dB Output Power for 1 dB Compression Icq= 750 mA 27 30 24 27 dBm (P1dB) Icq= 500 mA 27 23 Saturated Output Power (Psat) 32.5 31 dBm Output Third Order Intercept (IP3) 40 43 36 39 dBm 2 fo -50 -50 dBc Harmonics, Pout= 30 dBm, F= 5.8 GHz 3 fo -90 -90 dBc Noise Figure 6 6 dB Supply Current (Icq) Vpd= 0V/5V 0.002 / 750 0.002 / 750 mA Control Current (Ipd) Vpd= 5V 14 14 mA Switching Speed tOn, tOff 50 50 ns * Output match optimized for 5.7 - 5.9 GHz operation. See Application Circuit herein. Information furnish F e o d r pri by An ce, de alog Devic leis vie s rbyeli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. : 978 Phon -e25 : 7 0 81 -3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73
11 - 34
w.analog.com Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D
v03.0705
GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Typical Applications Features
The HMC408LP3 / HMC408LP3E is ideal for: Gain: 20 dB • 802.11a & HiperLAN WLAN Saturated Power: +32.5 dBm @ 27% PAE • UNII & Point-to-Point / Multi-Point Radios Single Supply Voltage: +5V • Access Point Radios Power Down Capability 11 3x3 mm Leadless SMT Package
Functional Diagram General Description
T The HMC408LP3 & HMC408LP3E are 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifi er MMICs which offer - SM +30 dBm P1dB. The amplifi er provides 20 dB of gain, S +32.5 dBm of saturated power, and 27% PAE from a R +5V supply voltage. The input is internally matched IE to 50 Ohms while the output requires a minimum of external components. Vpd can be used for full power IF L down or RF output power/current control. The amplifi er P is packaged in a low cost, 3x3 mm leadless surface M mount package with an exposed base for improved RF and thermal performance. R A E W O
Electrical Specifi cations, T = +25° C, Vs = 5V, Vpd = 5V A
& P R Parameter Min. Typ. Max. Min. Typ. Max. Units A Frequency Range 5.7 - 5.9 5.1 - 5.9 GHz E Gain 17 20 17 20 dB Gain Variation Over Temperature 0.045 0.055 0.045 0.055 dB/°C IN L Input Return Loss 8 8 dB Output Return Loss* 14 6 dB Output Power for 1 dB Compression Icq= 750 mA 27 30 24 27 dBm (P1dB) Icq= 500 mA 27 23 Saturated Output Power (Psat) 32.5 31 dBm Output Third Order Intercept (IP3) 40 43 36 39 dBm 2 fo -50 -50 dBc Harmonics, Pout= 30 dBm, F= 5.8 GHz 3 fo -90 -90 dBc Noise Figure 6 6 dB Supply Current (Icq) Vpd= 0V/5V 0.002 / 750 0.002 / 750 mA Control Current (Ipd) Vpd= 5V 14 14 mA Switching Speed tOn, tOff 50 50 ns * Output match optimized for 5.7 - 5.9 GHz operation. See Application Circuit herein. Information furnish F e o d r pri by An ce, de alog Devic leis vie s rbyeli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. : 978 Phon -e25 : 7 0 81 -3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73
11 - 34
w.analog.com Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D
