Datasheet STD30NF06 (STMicroelectronics) - 3
| Manufacturer | STMicroelectronics |
| Description | N-Channel 60V - 0.020 Ohm - 28A - DPAK StripFET(TM) II POWER MOSFET |
| Pages / Page | 10 / 3 — STD30NF06. ELECTRICAL CHARACTERISTICS. Symbol. Parameter. Test … |
| File Format / Size | PDF / 472 Kb |
| Document Language | English |
STD30NF06. ELECTRICAL CHARACTERISTICS. Symbol. Parameter. Test Conditions. Min. Typ. Max. Unit
Model Line for this Datasheet
Text Version of Document
STD30NF06 ELECTRICAL CHARACTERISTICS
(continued) SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 30 V ID = 19 A 20 ns tr Rise Time RG = 4.7 Ω VGS = 10 V 100 ns (Resistive Load, Figure 3) Qg Total Gate Charge VDD = 48V ID = 38A VGS= 10V 43 58 nC Qgs Gate-Source Charge 9.5 nC Qgd Gate-Drain Charge 15 nC SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Turn-off Delay Time VDD = 30 V ID = 19 A 50 ns tf Fall Time RG = 4.7Ω, VGS = 10 V 20 ns (Resistive Load, Figure 3) SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 28 A ISDM (•) Source-drain Current (pulsed) 112 A VSD (*) Forward On Voltage ISD = 28 A VGS = 0 1.5 V trr Reverse Recovery Time ISD = 28 A di/dt = 100A/µs 95 ns Qrr Reverse Recovery Charge VDD = 30 V Tj = 150°C 260 µC IRRM Reverse Recovery Current (see test circuit, Figure 5) 5.5 A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/10
(continued) SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 30 V ID = 19 A 20 ns tr Rise Time RG = 4.7 Ω VGS = 10 V 100 ns (Resistive Load, Figure 3) Qg Total Gate Charge VDD = 48V ID = 38A VGS= 10V 43 58 nC Qgs Gate-Source Charge 9.5 nC Qgd Gate-Drain Charge 15 nC SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Turn-off Delay Time VDD = 30 V ID = 19 A 50 ns tf Fall Time RG = 4.7Ω, VGS = 10 V 20 ns (Resistive Load, Figure 3) SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 28 A ISDM (•) Source-drain Current (pulsed) 112 A VSD (*) Forward On Voltage ISD = 28 A VGS = 0 1.5 V trr Reverse Recovery Time ISD = 28 A di/dt = 100A/µs 95 ns Qrr Reverse Recovery Charge VDD = 30 V Tj = 150°C 260 µC IRRM Reverse Recovery Current (see test circuit, Figure 5) 5.5 A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/10
