Datasheet 2SK2225 (Renesas) - 3
| Manufacturer | Renesas |
| Description | 1500V -2A - MOS FET High Speed Power Switching |
| Pages / Page | 7 / 3 — Main Characteristics |
| File Format / Size | PDF / 321 Kb |
| Document Language | English |
Main Characteristics
Model Line for this Datasheet
Text Version of Document
2SK2225
Main Characteristics
Power vs. Temperature Derating Maximum Safe Operation Area 80 10 10 μs 100 3 PW = 10 m μ 60 1 ms s (A) 1 DC Ope D s (1shot) 40 0.3 ration (Tc = 25 0.1 Operation in this area is 20 limited by R ° DS(on) C) Drain Current I 0.03 Channel Dissipation Pch (W) Ta = 25°C 0.01 0 50 100 150 200 10 30 100 300 1000 3000 10000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 5 2.0 15 V 10 V 8 V Pulse Test V 4 1.6 DS = 25 V Pulse Test (A) (A) 7 V D D 3 1.2 6 V 2 0.8 Tc = 75°C 25°C Drain Current I 5 V Drain Current I 1 0.4 –25°C VGS = 4 V 0 20 40 60 80 100 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current (V) Ω 50 ( 50 DS (on) Pulse Test DS (on) 40 20 VGS = 10 V ID = 3 A 10 15 V 30 5 2 A 20 2 1 A Pulse Test 10 1 0.5 A 0.5 0 4 8 12 16 20 0.1 0.2 0.5 1 2 5 10 Static Drain to Source on State Resistance R Drain to Source Saturation Voltage V Gate to Source Voltage VGS (V) Drain Current ID (A) R07DS1358EJ0400 Rev.4.00 Page 3 of 6 Dec 06, 2017
Main Characteristics
Power vs. Temperature Derating Maximum Safe Operation Area 80 10 10 μs 100 3 PW = 10 m μ 60 1 ms s (A) 1 DC Ope D s (1shot) 40 0.3 ration (Tc = 25 0.1 Operation in this area is 20 limited by R ° DS(on) C) Drain Current I 0.03 Channel Dissipation Pch (W) Ta = 25°C 0.01 0 50 100 150 200 10 30 100 300 1000 3000 10000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 5 2.0 15 V 10 V 8 V Pulse Test V 4 1.6 DS = 25 V Pulse Test (A) (A) 7 V D D 3 1.2 6 V 2 0.8 Tc = 75°C 25°C Drain Current I 5 V Drain Current I 1 0.4 –25°C VGS = 4 V 0 20 40 60 80 100 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage Static Drain to Source on State vs. Gate to Source Voltage Resistance vs. Drain Current (V) Ω 50 ( 50 DS (on) Pulse Test DS (on) 40 20 VGS = 10 V ID = 3 A 10 15 V 30 5 2 A 20 2 1 A Pulse Test 10 1 0.5 A 0.5 0 4 8 12 16 20 0.1 0.2 0.5 1 2 5 10 Static Drain to Source on State Resistance R Drain to Source Saturation Voltage V Gate to Source Voltage VGS (V) Drain Current ID (A) R07DS1358EJ0400 Rev.4.00 Page 3 of 6 Dec 06, 2017
