Datasheet TIPL762, TIPL762A (Bourns) - 2
| Manufacturer | Bourns |
| Description | NPN SILICON POWER TRANSISTORS |
| Pages / Page | 6 / 2 — TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS |
| File Format / Size | PDF / 167 Kb |
| Document Language | English |
TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS
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TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Collector-emitter TIPL762 400 VCEO(sus) I V sustaining voltage C = 100 mA L = 25 mH (see Note 2) TIPL762A 450 VCE = 850 V VBE = 0 TIPL762 50 Collector-emitter V V TIPL762A 50 I CE = 1000 V BE = 0 CES µA cut-off current VCE = 850 V VBE = 0 TC = 100°C TIPL762 200 VCE = 1000 V VBE = 0 TC = 100°C TIPL762A 200 Collector cut-off V I TIPL762 50 I CE = 400 V B = 0 CEO µA current VCE = 450 V IB = 0 TIPL762A 50 Emitter cut-off IEBO V current EB = 10 V IC = 0 1 mA Forward current hFE V transfer ratio CE = 5 V IC = 0.5 A (see Notes 3 and 4) 20 60 IB = 0.4 A IC = 2 A 0.5 Collector-emitter I I (see Notes 3 and 4) 1.0 V B = 0.8 A C = 4 A CE(sat) V saturation voltage IB = 1.2 A IC = 6 A 2.5 IB = 1.2 A IC = 6 A TC = 100°C 5.0 IB = 0.4 A IC = 2 A 1.1 Base-emitter I I (see Notes 3 and 4) 1.3 V B = 0.8 A C = 4 A BE(sat) V saturation voltage IB = 1.2 A IC = 6 A 1.5 IB = 1.2 A IC = 6 A TC = 100°C 1.4 E Current gain ft V bandwidth product CE = 10 V IC = 0.5 A f = 1 MHz 6 MHz Cob Output capacitance VCB = 20 V IE = 0 f = 0.1 MHz 105 pF NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1.25 °C/W OBSOLET
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT
tsv Voltage storage time 2.5 µs trv Voltage rise time 200 ns IC = 6 A t I fi Current fall time 150 ns V B(on) = 1.2 A (see Figures 1 and 2) BE(off) = -10 V tti Current tail time 50 ns txo Cross over time 300 ns tsv Voltage storage time 3 µs trv Voltage rise time 300 ns IC = 6 A IB(on) = 1.2 A t (see Figures 1 and 2) fi Current fall time 150 ns VBE(off) = -10 V TC = 100°C tti Current tail time 50 ns txo Cross over time 500 ns
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. AUGUST 1978 - REVISED SEPTEMBER 2002 2 Specifications are subject to change without notice.
Collector-emitter TIPL762 400 VCEO(sus) I V sustaining voltage C = 100 mA L = 25 mH (see Note 2) TIPL762A 450 VCE = 850 V VBE = 0 TIPL762 50 Collector-emitter V V TIPL762A 50 I CE = 1000 V BE = 0 CES µA cut-off current VCE = 850 V VBE = 0 TC = 100°C TIPL762 200 VCE = 1000 V VBE = 0 TC = 100°C TIPL762A 200 Collector cut-off V I TIPL762 50 I CE = 400 V B = 0 CEO µA current VCE = 450 V IB = 0 TIPL762A 50 Emitter cut-off IEBO V current EB = 10 V IC = 0 1 mA Forward current hFE V transfer ratio CE = 5 V IC = 0.5 A (see Notes 3 and 4) 20 60 IB = 0.4 A IC = 2 A 0.5 Collector-emitter I I (see Notes 3 and 4) 1.0 V B = 0.8 A C = 4 A CE(sat) V saturation voltage IB = 1.2 A IC = 6 A 2.5 IB = 1.2 A IC = 6 A TC = 100°C 5.0 IB = 0.4 A IC = 2 A 1.1 Base-emitter I I (see Notes 3 and 4) 1.3 V B = 0.8 A C = 4 A BE(sat) V saturation voltage IB = 1.2 A IC = 6 A 1.5 IB = 1.2 A IC = 6 A TC = 100°C 1.4 E Current gain ft V bandwidth product CE = 10 V IC = 0.5 A f = 1 MHz 6 MHz Cob Output capacitance VCB = 20 V IE = 0 f = 0.1 MHz 105 pF NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1.25 °C/W OBSOLET
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT
tsv Voltage storage time 2.5 µs trv Voltage rise time 200 ns IC = 6 A t I fi Current fall time 150 ns V B(on) = 1.2 A (see Figures 1 and 2) BE(off) = -10 V tti Current tail time 50 ns txo Cross over time 300 ns tsv Voltage storage time 3 µs trv Voltage rise time 300 ns IC = 6 A IB(on) = 1.2 A t (see Figures 1 and 2) fi Current fall time 150 ns VBE(off) = -10 V TC = 100°C tti Current tail time 50 ns txo Cross over time 500 ns
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. AUGUST 1978 - REVISED SEPTEMBER 2002 2 Specifications are subject to change without notice.
