Datasheet BUK7S0R5-40H (Nexperia) - 7
| Manufacturer | Nexperia |
| Description | N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88 |
| Pages / Page | 13 / 7 — Nexperia. BUK7S0R5-40H. N-channel 40 V, 0.5 mOhm standard level MOSFET in … |
| Revision | 06042021 |
| File Format / Size | PDF / 326 Kb |
| Document Language | English |
Nexperia. BUK7S0R5-40H. N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88
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Nexperia BUK7S0R5-40H N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88
aaa-032617 400 aaa-018138 10-1 ID ID (A) A (A ( ) A 10-2 300 Min Ty T p y Ma M x a 10-3 200 17 1 5 7 °C ° 10-4 100 10-5 25 2 ° 5 C ° Tj T = - 5 - 5° 5 C ° 0 10-6 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 VGS (V) VGS (V) Tj = 25 °C; VDS = 8 V Tj = 25 °C; VDS = 5 V
Fig. 8. Transfer characteristics; drain current as a Fig. 9. Sub-threshold drain current as a function of function of gate-source voltage; typical values gate-source voltage
aaa-018139 5 aaa-032618 4 VGS( S t(h) h RD R S D o S n o (V) V (m ( Ω m ) 4. 4 5 5 V 4 3.2 Max a 3 Ty T p 2.4 2 1.6 Min 7 7 V 6 6 V 5. 5 5 . 5 V 5 5 V 1 0.8 VGS = 1 0 1 0 V 0 0 -60 -30 0 30 60 90 120 150 180 0 80 160 240 320 400 Tj (°C) ID (A) ID = 1 mA ; VDS = VGS Tj = 25 °C
Fig. 10. Gate-source threshold voltage as a function of Fig. 11. Drain-source on-state resistance as a function junction temperature of drain current; typical values
BUK7S0R5-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 6 April 2021 7 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
aaa-032617 400 aaa-018138 10-1 ID ID (A) A (A ( ) A 10-2 300 Min Ty T p y Ma M x a 10-3 200 17 1 5 7 °C ° 10-4 100 10-5 25 2 ° 5 C ° Tj T = - 5 - 5° 5 C ° 0 10-6 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 VGS (V) VGS (V) Tj = 25 °C; VDS = 8 V Tj = 25 °C; VDS = 5 V
Fig. 8. Transfer characteristics; drain current as a Fig. 9. Sub-threshold drain current as a function of function of gate-source voltage; typical values gate-source voltage
aaa-018139 5 aaa-032618 4 VGS( S t(h) h RD R S D o S n o (V) V (m ( Ω m ) 4. 4 5 5 V 4 3.2 Max a 3 Ty T p 2.4 2 1.6 Min 7 7 V 6 6 V 5. 5 5 . 5 V 5 5 V 1 0.8 VGS = 1 0 1 0 V 0 0 -60 -30 0 30 60 90 120 150 180 0 80 160 240 320 400 Tj (°C) ID (A) ID = 1 mA ; VDS = VGS Tj = 25 °C
Fig. 10. Gate-source threshold voltage as a function of Fig. 11. Drain-source on-state resistance as a function junction temperature of drain current; typical values
BUK7S0R5-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 6 April 2021 7 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
