Datasheet PSMNR55-40SSH (Nexperia) - 10
| Manufacturer | Nexperia |
| Description | N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology |
| Pages / Page | 14 / 10 — Nexperia. PSMNR55-40SSH. N-channel 40 V, 0.55 mOhm, 500 Amps continuous, … |
| Revision | 06042021 |
| File Format / Size | PDF / 335 Kb |
| Document Language | English |
Nexperia. PSMNR55-40SSH. N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using
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Nexperia PSMNR55-40SSH N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology
aaa-032622 400 IS (A ( ) A 320 240 160 17 1 5 7 °C ° 80 Tj = 2 5 2 ° 5 C ° -5 - 5° 5 C ° 0 0 0.2 0.4 0.6 0.8 1 1.2 VSD (V) VGS = 0 V
Fig. 18. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMNR55-40SSH All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 6 April 2021 10 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
aaa-032622 400 IS (A ( ) A 320 240 160 17 1 5 7 °C ° 80 Tj = 2 5 2 ° 5 C ° -5 - 5° 5 C ° 0 0 0.2 0.4 0.6 0.8 1 1.2 VSD (V) VGS = 0 V
Fig. 18. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMNR55-40SSH All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 6 April 2021 10 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
