Datasheet MMBT2369L, MMBT2369AL (ON Semiconductor) - 2
| Manufacturer | ON Semiconductor |
| Description | Switching Transistors NPN Silicon |
| Pages / Page | 7 / 2 — MMBT2369L, MMBT2369AL. ELECTRICAL CHARACTERISTICS. Characteristic. … |
| Revision | 11 |
| File Format / Size | PDF / 203 Kb |
| Document Language | English |
MMBT2369L, MMBT2369AL. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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MMBT2369L, MMBT2369AL ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3) V(BR)CEO Vdc (IC = 10 mAdc, IB = 0) 15 − − Collector−Emitter Breakdown Voltage V(BR)CES Vdc (IC = 10 mAdc, VBE = 0) 40 − − Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = 10 mAdc, IE = 0) 40 − − Emitter−Base Breakdown Voltage V(BR)EBO Vdc (IE = 10 mAdc, IC = 0) 4.5 − − Collector Cutoff Current ICBO mAdc (VCB = 20 Vdc, IE = 0) − − 0.4 (VCB = 20 Vdc, IE = 0, TA = 150°C) − − 30 Collector Cutoff Current ICES mAdc MMBT2369A (VCE = 20 Vdc, VBE = 0) − − 0.4
ON CHARACTERISTICS
DC Current Gain (Note 3) hFE − MMBT2369 (IC = 10 mAdc, VCE = 1.0 Vdc) 40 − 120 MMBT2369A (IC = 10 mAdc, VCE = 1.0 Vdc) − − 120 MMBT2369A (IC = 10 mAdc, VCE = 0.35 Vdc) 40 − − MMBT2369A (IC = 10 mAdc, VCE = 0.35 Vdc, TA = −55°C) 20 − − MMBT2369A (IC = 30 mAdc, VCE = 0.4 Vdc) 30 − − MMBT2369 (IC = 100 mAdc, VCE = 2.0 Vdc) 20 − − MMBT2369A (IC = 100 mAdc, VCE = 1.0 Vdc) 20 − − Collector−Emitter Saturation Voltage (Note 3) VCE(sat) Vdc MMBT2369 (IC = 10 mAdc, IB = 1.0 mAdc) − − 0.25 MMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc) − − 0.20 MMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) − − 0.30 MMBT2369A (IC = 30 mAdc, IB = 3.0 mAdc) − − 0.25 MMBT2369A (IC = 100 mAdc, IB = 10 mAdc) − − 0.50 Base −Emitter Saturation Voltage (Note 3) VBE(sat) Vdc MMBT2369/A (IC = 10 mAdc, IB = 1.0 mAdc) 0.7 − 0.85 MMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc, TA = −55°C) − − 1.02 MMBT2369A (IC = 30 mAdc, IB = 3.0 mAdc) − − 1.15 MMBT2369A (IC = 100 mAdc, IB = 10 mAdc) − − 1.60
SMALL− SIGNAL CHARACTERISTICS
Output Capacitance Cobo pF (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) − − 4.0 Small Signal Current Gain hfe − (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) 5.0 − −
SWITCHING CHARACTERISTICS
Storage Time ts ns (IB1 = IB2 = IC = 10 mAdc) − 5.0 13 Turn−On Time ton ns (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) − 8.0 12 Turn−Off Time toff ns (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) − 10 18 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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MMBT2369L, MMBT2369AL ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3) V(BR)CEO Vdc (IC = 10 mAdc, IB = 0) 15 − − Collector−Emitter Breakdown Voltage V(BR)CES Vdc (IC = 10 mAdc, VBE = 0) 40 − − Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = 10 mAdc, IE = 0) 40 − − Emitter−Base Breakdown Voltage V(BR)EBO Vdc (IE = 10 mAdc, IC = 0) 4.5 − − Collector Cutoff Current ICBO mAdc (VCB = 20 Vdc, IE = 0) − − 0.4 (VCB = 20 Vdc, IE = 0, TA = 150°C) − − 30 Collector Cutoff Current ICES mAdc MMBT2369A (VCE = 20 Vdc, VBE = 0) − − 0.4
ON CHARACTERISTICS
DC Current Gain (Note 3) hFE − MMBT2369 (IC = 10 mAdc, VCE = 1.0 Vdc) 40 − 120 MMBT2369A (IC = 10 mAdc, VCE = 1.0 Vdc) − − 120 MMBT2369A (IC = 10 mAdc, VCE = 0.35 Vdc) 40 − − MMBT2369A (IC = 10 mAdc, VCE = 0.35 Vdc, TA = −55°C) 20 − − MMBT2369A (IC = 30 mAdc, VCE = 0.4 Vdc) 30 − − MMBT2369 (IC = 100 mAdc, VCE = 2.0 Vdc) 20 − − MMBT2369A (IC = 100 mAdc, VCE = 1.0 Vdc) 20 − − Collector−Emitter Saturation Voltage (Note 3) VCE(sat) Vdc MMBT2369 (IC = 10 mAdc, IB = 1.0 mAdc) − − 0.25 MMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc) − − 0.20 MMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) − − 0.30 MMBT2369A (IC = 30 mAdc, IB = 3.0 mAdc) − − 0.25 MMBT2369A (IC = 100 mAdc, IB = 10 mAdc) − − 0.50 Base −Emitter Saturation Voltage (Note 3) VBE(sat) Vdc MMBT2369/A (IC = 10 mAdc, IB = 1.0 mAdc) 0.7 − 0.85 MMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc, TA = −55°C) − − 1.02 MMBT2369A (IC = 30 mAdc, IB = 3.0 mAdc) − − 1.15 MMBT2369A (IC = 100 mAdc, IB = 10 mAdc) − − 1.60
SMALL− SIGNAL CHARACTERISTICS
Output Capacitance Cobo pF (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) − − 4.0 Small Signal Current Gain hfe − (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) 5.0 − −
SWITCHING CHARACTERISTICS
Storage Time ts ns (IB1 = IB2 = IC = 10 mAdc) − 5.0 13 Turn−On Time ton ns (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) − 8.0 12 Turn−Off Time toff ns (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) − 10 18 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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