Datasheet MMBT3640 (ON Semiconductor) - 3

Values are at TA = 25°C unless otherwise noted. Symbol Parameter V(BR)CEO Collector-Emitter Breakdown
Voltage(4) Conditions
IC = -10 mA, IB = 0 Min. Max. Unit -12 V V(BR)CES Collector-Emitter Breakdown Voltage IC = -100 μA, VBE = 0 -12 V V(BR)CBO Collector-Base Breakdown Voltage IC = -100 μA, IE = 0 -12 V V(BR)EBO Emitter-Base Breakdown Voltage IE = -100 μA, IC = 0 -4.0 V ICES
IB
hFE VCE(sat) VBE(sat) VCE = -6.0 V, VBE = 0 -0.01 Collector Cut-Off Current VCE = -6.0 V, VBE = 0,
TA = 65°C -1.00 Base Current VCE = -6.0 V, VBE = 0 -10 DC Current Gain(4) Collector-Emitter Saturation
Voltage(4) Base-Emitter Saturation Voltage(4) IC = -10 mA, VCE = -0.3 V 30 IC = -50 mA, VCE = -1.0 V 20 nA 120 IC = -10 mA, IB = -0.5 mA -0.30 IC = -10 mA, IB = -1.0 mA -0.20 IC = -50 mA, IB = -5.0 mA -0.60 IC = -10 mA, IB = -1.0 mA,
TA = 65°C -0.25 IC = -10 mA, IB = -0.5 mA -0.75 -0.95 IC = -10 mA, IB = -1.0 mA -0.80 -1.00 IC = -50 mA, IB = -5.0 mA μA V V -1.50 Current Gain -Bandwidth Product IC = -10 mA, VCE = -5.0 V,
f = 100 MHz Cob Output Capacitance VCB = -5.0 V, IE = 0,
f = 1.0 MHz 3.5 pF Cib Input Capacitance VEB = -0.5 V, IC = 0,
f = 1.0 MHz 3.5 pF VCC = -6 V, VBE(off) = -1.9 V,
IC = -50 mA, IB1 = -5.0 mA 10 ns 30 ns VCC = -6 V, IC = -50 mA,
IB1 = IB2 = -5.0 mA 20 ns 12 ns fT td Delay Time tr Rise Time ts Storage Time tf Fall Time ton toff Turn-On Time Turn-Off Time 500 MHz VCC = -6 V, VBE(off) = -1.9 V,
IC = -50 mA, IB1 = -5.0 mA 25 VCC = -1.5 V, IC = -10 mA,
IB1 = IB2 = -0.5 mA 60 VCC = -6 V, VBE(off) = -1.9 V,
IC = -50 mA, IB1 = -5.0 mA 35 VCC = -1.5 V, IC = -10 mA,
IB1 = IB2 = -0.5 mA 75 ns ns Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 2001 Fairchild Semiconductor Corporation
MMBT3640 Rev. 1.1.0 www.fairchildsemi.com
2 MMBT3640 — PNP Switching Amplifier Electrical Characteristics