Datasheet UF3SC065030B7S (UnitedSiC) - 2
| Manufacturer | UnitedSiC |
| Description | 650V-27mW SiC FET |
| Pages / Page | 10 / 2 — Maximum. Ratings. Parameter. Symbol. Test. Conditions. Value. Units. … |
| File Format / Size | PDF / 440 Kb |
| Document Language | English |
Maximum. Ratings. Parameter. Symbol. Test. Conditions. Value. Units. Drain-source. voltage. VDS. 650. V. Gate-source. voltage. VGS. DC. -25. to. +25. V. TC. =. 25°C
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Maximum Ratings Parameter Symbol Test Conditions Value Units Drain-source voltage VDS 650 V Gate-source voltage VGS DC -25 to +25 V TC = 25°C 62 A Continuous drain current 1 ID TC = 100°C 44 A Pulsed drain current 2 IDM TC = 25°C 230 A Single pulsed avalanche energy 3 EAS L=15mH, IAS =4A 120 mJ Power dissipation Ptot TC = 25°C 214 W Maximum junction temperature TJ,max 175 °C Operating and storage temperature TJ, TSTG -55 to 175 °C Reflow soldering temperature Tsolder reflow MSL 3 260 °C 1. Limited by TJ,max 2. Pulse width tp limited by TJ,max 3. Starting TJ = 25°C Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max Thermal resistance, junction-to-case Rq 0.54 0.7 °C/W JC Datasheet: UF3SC065030B7S Rev. A, December 2020 2
