Datasheet STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z (STMicroelectronics) - 3
| Manufacturer | STMicroelectronics |
| Description | N-channel 900 V, 1.1 Ω, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH Power MOSFET |
| Pages / Page | 17 / 3 — STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z. Electrical ratings. 1 … |
| File Format / Size | PDF / 1.0 Mb |
| Document Language | English |
STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z. Electrical ratings. 1 Electrical. ratings. Table 2. Absolute maximum ratings. Value
Model Line for this Datasheet
Text Version of Document
link to page 9 link to page 9
STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, D²PAK TO-220FP TO-247
VDS Drain-source voltage (VGS = 0) 900 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 8 8(1) A ID Drain current (continuous) at TC=100 °C 5 5(1) A I (2) DM Drain current (pulsed) 32 32(1) A PTOT Total dissipation at TC = 25 °C 160 40 W Derating Factor 1.28 0.32 W/°C Vesd(G-S) G-S ESD (HBM C=100 pF, R=1.5 kΩ) 4 KV dv/dt(3) Peak diode recovery voltage slope 4.5 V/ns Insulation withstand voltage (RMS) from all VISO three leads to external heat sink -- 2500 V (t=1s;TC=25°C) TJ Operating junction temperature -55 to 150 °C T Storage temperature stg 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 10 A, di/dt ≤ 200 A/µs,VDD ≤ V(BR)DSS, Tj ≤ TJmax.
Table 3. Thermal data Value Symbol Parameter Unit TO-220 TO-220FP TO-247 D²PAK
Rthj-case Thermal resistance junction-case max 0.78 3.1 0.78 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 50 °C/W Maximum lead temperature for soldering Tl 300 °C purpose
Table 4. Avalanche characteristics Symbol Parameter Value Unit
Avalanche current, repetitive or not-repetitive IAR 8 A (pulse width limited by Tj max.) Single pulse avalanche energy (starting Tj=25 °C, EAS ID= IAR, VDD= 50 V) (see Figure 22)(see Figure 23) 300 mJ Doc ID 9479 Rev 7 3/17 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data Table 4. Avalanche characteristics 2 Electrical characteristics Table 5. On/off states Table 6. Dynamic Table 7. Switching times Table 8. Source drain diode Table 9. Gate-source Zener diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D·PAK Figure 3. Thermal impedance for TO-220, D·PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Figure 18. Maximum avalanche energy vs temperature 3 Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load switching and diode recovery times Figure 22. Unclamped Inductive load test circuit Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform 4 Package mechanical data Table 10. TO-220FP mechanical data Figure 25. TO-220FP drawing 5 Packaging mechanical data 6 Revision history Table 11. Revision history
STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, D²PAK TO-220FP TO-247
VDS Drain-source voltage (VGS = 0) 900 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 8 8(1) A ID Drain current (continuous) at TC=100 °C 5 5(1) A I (2) DM Drain current (pulsed) 32 32(1) A PTOT Total dissipation at TC = 25 °C 160 40 W Derating Factor 1.28 0.32 W/°C Vesd(G-S) G-S ESD (HBM C=100 pF, R=1.5 kΩ) 4 KV dv/dt(3) Peak diode recovery voltage slope 4.5 V/ns Insulation withstand voltage (RMS) from all VISO three leads to external heat sink -- 2500 V (t=1s;TC=25°C) TJ Operating junction temperature -55 to 150 °C T Storage temperature stg 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 10 A, di/dt ≤ 200 A/µs,VDD ≤ V(BR)DSS, Tj ≤ TJmax.
Table 3. Thermal data Value Symbol Parameter Unit TO-220 TO-220FP TO-247 D²PAK
Rthj-case Thermal resistance junction-case max 0.78 3.1 0.78 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 50 °C/W Maximum lead temperature for soldering Tl 300 °C purpose
Table 4. Avalanche characteristics Symbol Parameter Value Unit
Avalanche current, repetitive or not-repetitive IAR 8 A (pulse width limited by Tj max.) Single pulse avalanche energy (starting Tj=25 °C, EAS ID= IAR, VDD= 50 V) (see Figure 22)(see Figure 23) 300 mJ Doc ID 9479 Rev 7 3/17 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data Table 4. Avalanche characteristics 2 Electrical characteristics Table 5. On/off states Table 6. Dynamic Table 7. Switching times Table 8. Source drain diode Table 9. Gate-source Zener diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D·PAK Figure 3. Thermal impedance for TO-220, D·PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Figure 18. Maximum avalanche energy vs temperature 3 Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load switching and diode recovery times Figure 22. Unclamped Inductive load test circuit Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform 4 Package mechanical data Table 10. TO-220FP mechanical data Figure 25. TO-220FP drawing 5 Packaging mechanical data 6 Revision history Table 11. Revision history
